Hysteretic control of organic conductance due to remanent magnetic fringe fields

F. Macià, F. Wang, N. J. Harmon, M. Wohlgenannt, A. D. Kent, M. E. Flatté

    Research output: Contribution to journalArticle

    Abstract

    Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq3, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film. The effect of fringe fields is insensitive to ferromagnetic film's thickness (which varies the fringe field magnitude proportionately) but sensitive to the magnetic domain's correlation length.

    Original languageEnglish (US)
    Article number042408
    JournalApplied Physics Letters
    Volume102
    Issue number4
    DOIs
    StatePublished - Jan 28 2013

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Macià, F., Wang, F., Harmon, N. J., Wohlgenannt, M., Kent, A. D., & Flatté, M. E. (2013). Hysteretic control of organic conductance due to remanent magnetic fringe fields. Applied Physics Letters, 102(4), [042408]. https://doi.org/10.1063/1.4790141