Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor

G. Dushaq, Mahmoud Rasras, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we study the effect of the H2/GeH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline Germanium (Ge) embedded in amorphous matrix thin films. The thin films are prepared using a standard RF-PECVD process at a substrate temperature of 300 °C. The effect of the hydrogen dilution ratio on the optical index of refraction and the optical transmission were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with a low GeH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow rate during the growth of μc-Ge:H thin films, approximately 71% crystalline fraction was detected at 100sccm of H2.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7
PublisherElectrochemical Society Inc.
Pages213-217
Number of pages5
Volume77
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2017
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 - 231st ECS Meeting 2017 - New Orleans, United States
Duration: May 28 2017Jun 1 2017

Other

OtherInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 - 231st ECS Meeting 2017
CountryUnited States
CityNew Orleans
Period5/28/176/1/17

Fingerprint

Plasma enhanced chemical vapor deposition
Germanium
Crystallization
Refraction
Thin films
Hydrogen
Dilution
Flow rate
Crystalline materials
Light transmission
Temperature
Structural properties
Optical properties
Wavelength
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dushaq, G., Rasras, M., & Nayfeh, A. (2017). Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 (5 ed., Vol. 77, pp. 213-217). Electrochemical Society Inc.. https://doi.org/10.1149/07705.0213ecst

Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor. / Dushaq, G.; Rasras, Mahmoud; Nayfeh, A.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7. Vol. 77 5. ed. Electrochemical Society Inc., 2017. p. 213-217.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dushaq, G, Rasras, M & Nayfeh, A 2017, Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor. in Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7. 5 edn, vol. 77, Electrochemical Society Inc., pp. 213-217, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7 - 231st ECS Meeting 2017, New Orleans, United States, 5/28/17. https://doi.org/10.1149/07705.0213ecst
Dushaq G, Rasras M, Nayfeh A. Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7. 5 ed. Vol. 77. Electrochemical Society Inc. 2017. p. 213-217 https://doi.org/10.1149/07705.0213ecst
Dushaq, G. ; Rasras, Mahmoud ; Nayfeh, A. / Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7. Vol. 77 5. ed. Electrochemical Society Inc., 2017. pp. 213-217
@inproceedings{4a9642df67cc40f4a8cde4f7fc3d2f5c,
title = "Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor",
abstract = "In this paper we study the effect of the H2/GeH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline Germanium (Ge) embedded in amorphous matrix thin films. The thin films are prepared using a standard RF-PECVD process at a substrate temperature of 300 °C. The effect of the hydrogen dilution ratio on the optical index of refraction and the optical transmission were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with a low GeH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow rate during the growth of μc-Ge:H thin films, approximately 71{\%} crystalline fraction was detected at 100sccm of H2.",
author = "G. Dushaq and Mahmoud Rasras and A. Nayfeh",
year = "2017",
month = "1",
day = "1",
doi = "10.1149/07705.0213ecst",
language = "English (US)",
volume = "77",
pages = "213--217",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7",
publisher = "Electrochemical Society Inc.",
edition = "5",

}

TY - GEN

T1 - Hydrogen-induced crystallization of germanium films at low temperature using an RF-PECVD reactor

AU - Dushaq, G.

AU - Rasras, Mahmoud

AU - Nayfeh, A.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this paper we study the effect of the H2/GeH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline Germanium (Ge) embedded in amorphous matrix thin films. The thin films are prepared using a standard RF-PECVD process at a substrate temperature of 300 °C. The effect of the hydrogen dilution ratio on the optical index of refraction and the optical transmission were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with a low GeH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow rate during the growth of μc-Ge:H thin films, approximately 71% crystalline fraction was detected at 100sccm of H2.

AB - In this paper we study the effect of the H2/GeH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline Germanium (Ge) embedded in amorphous matrix thin films. The thin films are prepared using a standard RF-PECVD process at a substrate temperature of 300 °C. The effect of the hydrogen dilution ratio on the optical index of refraction and the optical transmission were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with a low GeH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow rate during the growth of μc-Ge:H thin films, approximately 71% crystalline fraction was detected at 100sccm of H2.

UR - http://www.scopus.com/inward/record.url?scp=85021806221&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021806221&partnerID=8YFLogxK

U2 - 10.1149/07705.0213ecst

DO - 10.1149/07705.0213ecst

M3 - Conference contribution

AN - SCOPUS:85021806221

VL - 77

SP - 213

EP - 217

BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7

PB - Electrochemical Society Inc.

ER -