Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon

Sumit Agarwal, Bram Hoex, M. C M Van De Banden, Dimitrios Maraudas, Eray Aydil

Research output: Contribution to journalArticle

Abstract

Hydrogen and deuterium in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous silicon thin films deposited from SiH 4 and SiD 4 plasmas. Infrared absorptions due to these configurations were measured using in situ multiple total internal reflection Fourier transform infrared spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D 2(H 2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si-H(D) stretching modes for BC hydrogen and BC deuterium were observed at ∼1950 and ∼1420 cm -1, respectively, while those for platelet-like hydrogen and deuterium were detected at ∼2033 and ∼1480 cm -1, respectively.

Original languageEnglish (US)
Pages (from-to)2719-2726
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number6
DOIs
StatePublished - Nov 1 2004

Fingerprint

Platelets
platelets
Amorphous silicon
amorphous silicon
Deuterium
deuterium
Hydrogen
Defects
defects
hydrogen
configurations
Plasmas
Infrared absorption
infrared absorption
Stretching
Fourier transform infrared spectroscopy
infrared spectroscopy
interference
Thin films
thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon. / Agarwal, Sumit; Hoex, Bram; Van De Banden, M. C M; Maraudas, Dimitrios; Aydil, Eray.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 6, 01.11.2004, p. 2719-2726.

Research output: Contribution to journalArticle

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