Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays

Cheng Chih Hsieh, Yao Feng Chang, Ying Chen Chen, Davood Shahrjerdi, Sanjay K. Banerjee

Research output: Contribution to journalArticle

Abstract

In this work, we present silicon process compatible, stable and reliable (>108 cycles), high non-linearity ratio at a half-read voltage (>5 × 105), high speed (<60 ns), and low operating voltage (<3V) back-to-back Schottky diodes. Materials choice of electrode, the thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory (RRAM) arrays.

Original languageEnglish (US)
Pages (from-to)N143-N147
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number9
DOIs
StatePublished - 2017

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Amorphous silicon
Diodes
Data storage equipment
Electric potential
Silicon
Doping (additives)
Semiconductor materials
Electrodes
Computer simulation
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Highly non-linear and reliable amorphous silicon based back-to-back Schottky diode as selector device for large scale RRAM arrays. / Hsieh, Cheng Chih; Chang, Yao Feng; Chen, Ying Chen; Shahrjerdi, Davood; Banerjee, Sanjay K.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 9, 2017, p. N143-N147.

Research output: Contribution to journalArticle

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AU - Banerjee, Sanjay K.

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