High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

Davood Shahrjerdi, B. Hekmatshoar, S. S. Mohajerzadeh, A. Khakifirooz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm<sup>2</sup>/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.

Original languageEnglish (US)
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-86
Number of pages2
Volume2003-January
ISBN (Print)0780377273
DOIs
StatePublished - 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: Jun 23 2003Jun 25 2003

Other

Other61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period6/23/036/25/03

Fingerprint

Hole mobility
Crystallization
Plastics
Substrates
Temperature

Keywords

  • Compressive stress
  • Copper
  • Crystallization
  • Plastics
  • Positron emission tomography
  • Substrates
  • Temperature
  • Tensile strain
  • Tensile stress
  • Thermomechanical processes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shahrjerdi, D., Hekmatshoar, B., Mohajerzadeh, S. S., & Khakifirooz, A. (2003). High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. In 61st Device Research Conference, DRC 2003 - Conference Digest (Vol. 2003-January, pp. 85-86). [1226884] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226884

High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. / Shahrjerdi, Davood; Hekmatshoar, B.; Mohajerzadeh, S. S.; Khakifirooz, A.

61st Device Research Conference, DRC 2003 - Conference Digest. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 85-86 1226884.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shahrjerdi, D, Hekmatshoar, B, Mohajerzadeh, SS & Khakifirooz, A 2003, High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. in 61st Device Research Conference, DRC 2003 - Conference Digest. vol. 2003-January, 1226884, Institute of Electrical and Electronics Engineers Inc., pp. 85-86, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 6/23/03. https://doi.org/10.1109/DRC.2003.1226884
Shahrjerdi D, Hekmatshoar B, Mohajerzadeh SS, Khakifirooz A. High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. In 61st Device Research Conference, DRC 2003 - Conference Digest. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 85-86. 1226884 https://doi.org/10.1109/DRC.2003.1226884
Shahrjerdi, Davood ; Hekmatshoar, B. ; Mohajerzadeh, S. S. ; Khakifirooz, A. / High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C. 61st Device Research Conference, DRC 2003 - Conference Digest. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 85-86
@inproceedings{b3d33ca95a6f45acabedd97e28bcb4d7,
title = "High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C",
abstract = "In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm2/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.",
keywords = "Compressive stress, Copper, Crystallization, Plastics, Positron emission tomography, Substrates, Temperature, Tensile strain, Tensile stress, Thermomechanical processes",
author = "Davood Shahrjerdi and B. Hekmatshoar and Mohajerzadeh, {S. S.} and A. Khakifirooz",
year = "2003",
doi = "10.1109/DRC.2003.1226884",
language = "English (US)",
isbn = "0780377273",
volume = "2003-January",
pages = "85--86",
booktitle = "61st Device Research Conference, DRC 2003 - Conference Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - High mobility poly-Ge TFTs on flexible plastic fabricated at 130°C

AU - Shahrjerdi, Davood

AU - Hekmatshoar, B.

AU - Mohajerzadeh, S. S.

AU - Khakifirooz, A.

PY - 2003

Y1 - 2003

N2 - In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm2/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.

AB - In this paper, depletion mode poly-Ge TFTs with effective hole mobility of 110 cm2/Vs are fabricated on flexible PET substrates. Process temperature is kept below 130°C, taking advantage of a novel stress-assisted crystallization technique.

KW - Compressive stress

KW - Copper

KW - Crystallization

KW - Plastics

KW - Positron emission tomography

KW - Substrates

KW - Temperature

KW - Tensile strain

KW - Tensile stress

KW - Thermomechanical processes

UR - http://www.scopus.com/inward/record.url?scp=4544388852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544388852&partnerID=8YFLogxK

U2 - 10.1109/DRC.2003.1226884

DO - 10.1109/DRC.2003.1226884

M3 - Conference contribution

SN - 0780377273

VL - 2003-January

SP - 85

EP - 86

BT - 61st Device Research Conference, DRC 2003 - Conference Digest

PB - Institute of Electrical and Electronics Engineers Inc.

ER -