High gain photodetection by barrier modulation in compensated Schottky junctions

E. L. Wolf

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A detailed study of barrier modulation mechanism of photoconductive response has been carried out in modified Schottky barrier contacts of gold to conductive CdS. The forward bias I-V characteristics are shown to be well described by the usual thermionic diode law with a light dependent barrier height V//B plus V//H. The barrier height and its change with illumination minus 0. 23 V in a typical diode at high light intensity, have been determined by photoemission and capacitance measurements, as well as from the voltage and temperature dependences of ln I. The limiting performance of this type of photodetector is discussed.

Original languageEnglish (US)
Title of host publicationMetal-semiconductor contacts
EditorsM. Pepper
Place of PublicationLondon and Bristol
PublisherThe Institute of London
Pages91-101
Number of pages11
StatePublished - 1974
EventConf on Met-Semicond Contacts, Proc, Pap - Manchester, Engl
Duration: Apr 3 1974Apr 4 1974

Publication series

NameConference Series Number 22

Other

OtherConf on Met-Semicond Contacts, Proc, Pap
CityManchester, Engl
Period4/3/744/4/74

Fingerprint

Diodes
Modulation
High intensity light
Capacitance measurement
Photoemission
Photodetectors
Lighting
Gold
Electric potential
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wolf, E. L. (1974). High gain photodetection by barrier modulation in compensated Schottky junctions. In M. Pepper (Ed.), Metal-semiconductor contacts (pp. 91-101). (Conference Series Number 22). London and Bristol: The Institute of London.

High gain photodetection by barrier modulation in compensated Schottky junctions. / Wolf, E. L.

Metal-semiconductor contacts. ed. / M. Pepper. London and Bristol : The Institute of London, 1974. p. 91-101 (Conference Series Number 22).

Research output: Chapter in Book/Report/Conference proceedingChapter

Wolf, EL 1974, High gain photodetection by barrier modulation in compensated Schottky junctions. in M Pepper (ed.), Metal-semiconductor contacts. Conference Series Number 22, The Institute of London, London and Bristol, pp. 91-101, Conf on Met-Semicond Contacts, Proc, Pap, Manchester, Engl, 4/3/74.
Wolf EL. High gain photodetection by barrier modulation in compensated Schottky junctions. In Pepper M, editor, Metal-semiconductor contacts. London and Bristol: The Institute of London. 1974. p. 91-101. (Conference Series Number 22).
Wolf, E. L. / High gain photodetection by barrier modulation in compensated Schottky junctions. Metal-semiconductor contacts. editor / M. Pepper. London and Bristol : The Institute of London, 1974. pp. 91-101 (Conference Series Number 22).
@inbook{50de531861654f64bc43c81b23613653,
title = "High gain photodetection by barrier modulation in compensated Schottky junctions",
abstract = "A detailed study of barrier modulation mechanism of photoconductive response has been carried out in modified Schottky barrier contacts of gold to conductive CdS. The forward bias I-V characteristics are shown to be well described by the usual thermionic diode law with a light dependent barrier height V//B plus V//H. The barrier height and its change with illumination minus 0. 23 V in a typical diode at high light intensity, have been determined by photoemission and capacitance measurements, as well as from the voltage and temperature dependences of ln I. The limiting performance of this type of photodetector is discussed.",
author = "Wolf, {E. L.}",
year = "1974",
language = "English (US)",
series = "Conference Series Number 22",
publisher = "The Institute of London",
pages = "91--101",
editor = "M. Pepper",
booktitle = "Metal-semiconductor contacts",

}

TY - CHAP

T1 - High gain photodetection by barrier modulation in compensated Schottky junctions

AU - Wolf, E. L.

PY - 1974

Y1 - 1974

N2 - A detailed study of barrier modulation mechanism of photoconductive response has been carried out in modified Schottky barrier contacts of gold to conductive CdS. The forward bias I-V characteristics are shown to be well described by the usual thermionic diode law with a light dependent barrier height V//B plus V//H. The barrier height and its change with illumination minus 0. 23 V in a typical diode at high light intensity, have been determined by photoemission and capacitance measurements, as well as from the voltage and temperature dependences of ln I. The limiting performance of this type of photodetector is discussed.

AB - A detailed study of barrier modulation mechanism of photoconductive response has been carried out in modified Schottky barrier contacts of gold to conductive CdS. The forward bias I-V characteristics are shown to be well described by the usual thermionic diode law with a light dependent barrier height V//B plus V//H. The barrier height and its change with illumination minus 0. 23 V in a typical diode at high light intensity, have been determined by photoemission and capacitance measurements, as well as from the voltage and temperature dependences of ln I. The limiting performance of this type of photodetector is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0016408376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016408376&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0016408376

T3 - Conference Series Number 22

SP - 91

EP - 101

BT - Metal-semiconductor contacts

A2 - Pepper, M.

PB - The Institute of London

CY - London and Bristol

ER -