High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology

Davood Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, J. A. Ott, T. Gokmen, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the effectiveness of our disruptive controlled spalling technology for making high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the thin-film tandem cells (∼14μm) from the host Ge substrates. The electrical characteristics of the thin-film cells (spalled) were examined and compared against the bulk cells (non-spalled) on original Ge wafers. Furthermore, the structural integrity of the transferred thin-film cells was scrutinized using transmission electron microscopy. Our results confirm that the structural properties and the intrinsic material parameters (such as minority carrier lifetime, surface recombination velocity, etc) of the thin-film tandem solar cells are unchanged after spalling.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages974-977
Number of pages4
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Fingerprint

Spalling
Thin films
Solar cells
Carrier lifetime
Structural integrity
Structural properties
Multi-junction solar cells
Transmission electron microscopy
Substrates

Keywords

  • layer transfer
  • tandem junction
  • thin-film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Shahrjerdi, D., Bedell, S. W., Ebert, C., Bayram, C., Hekmatshoar, B., Fogel, K., ... Sadana, D. K. (2012). High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012 (pp. 974-977). [6317765] https://doi.org/10.1109/PVSC.2012.6317765

High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology. / Shahrjerdi, Davood; Bedell, S. W.; Ebert, C.; Bayram, C.; Hekmatshoar, B.; Fogel, K.; Lauro, P.; Gaynes, M.; Ott, J. A.; Gokmen, T.; Sadana, D. K.

Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 974-977 6317765.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shahrjerdi, D, Bedell, SW, Ebert, C, Bayram, C, Hekmatshoar, B, Fogel, K, Lauro, P, Gaynes, M, Ott, JA, Gokmen, T & Sadana, DK 2012, High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317765, pp. 974-977, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 6/3/12. https://doi.org/10.1109/PVSC.2012.6317765
Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K et al. High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology. In Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 974-977. 6317765 https://doi.org/10.1109/PVSC.2012.6317765
Shahrjerdi, Davood ; Bedell, S. W. ; Ebert, C. ; Bayram, C. ; Hekmatshoar, B. ; Fogel, K. ; Lauro, P. ; Gaynes, M. ; Ott, J. A. ; Gokmen, T. ; Sadana, D. K. / High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology. Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. pp. 974-977
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