High-efficiency heterojunction solar cells on crystalline germanium substrates

Bahman Hekmatshoar, Davood Shahrjerdi, Marinus Hopstaken, Keith Fogel, Devendra K. Sadana

Research output: Contribution to journalArticle

Abstract

We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9 and 7.2 on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon using plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. The conversion efficiencies of the HJ solar cells are well-comparable with conventional devices fabricated at temperatures as high as 600 °C. We also study the surface passivation of c-Ge with hydrogenated amorphous and microcrystalline Si and correlate the passivation quality with the electrical performance of the HJ solar cells.

Original languageEnglish (US)
Article number032102
JournalApplied Physics Letters
Volume101
Issue number3
DOIs
StatePublished - Jul 16 2012

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heterojunctions
germanium
solar cells
passivity
emitters
vapor deposition
temperature
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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High-efficiency heterojunction solar cells on crystalline germanium substrates. / Hekmatshoar, Bahman; Shahrjerdi, Davood; Hopstaken, Marinus; Fogel, Keith; Sadana, Devendra K.

In: Applied Physics Letters, Vol. 101, No. 3, 032102, 16.07.2012.

Research output: Contribution to journalArticle

Hekmatshoar, Bahman ; Shahrjerdi, Davood ; Hopstaken, Marinus ; Fogel, Keith ; Sadana, Devendra K. / High-efficiency heterojunction solar cells on crystalline germanium substrates. In: Applied Physics Letters. 2012 ; Vol. 101, No. 3.
@article{4338eeffa020432583c0a3722c85a235,
title = "High-efficiency heterojunction solar cells on crystalline germanium substrates",
abstract = "We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9 and 7.2 on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon using plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. The conversion efficiencies of the HJ solar cells are well-comparable with conventional devices fabricated at temperatures as high as 600 °C. We also study the surface passivation of c-Ge with hydrogenated amorphous and microcrystalline Si and correlate the passivation quality with the electrical performance of the HJ solar cells.",
author = "Bahman Hekmatshoar and Davood Shahrjerdi and Marinus Hopstaken and Keith Fogel and Sadana, {Devendra K.}",
year = "2012",
month = "7",
day = "16",
doi = "10.1063/1.4737166",
language = "English (US)",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - High-efficiency heterojunction solar cells on crystalline germanium substrates

AU - Hekmatshoar, Bahman

AU - Shahrjerdi, Davood

AU - Hopstaken, Marinus

AU - Fogel, Keith

AU - Sadana, Devendra K.

PY - 2012/7/16

Y1 - 2012/7/16

N2 - We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9 and 7.2 on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon using plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. The conversion efficiencies of the HJ solar cells are well-comparable with conventional devices fabricated at temperatures as high as 600 °C. We also study the surface passivation of c-Ge with hydrogenated amorphous and microcrystalline Si and correlate the passivation quality with the electrical performance of the HJ solar cells.

AB - We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9 and 7.2 on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon using plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. The conversion efficiencies of the HJ solar cells are well-comparable with conventional devices fabricated at temperatures as high as 600 °C. We also study the surface passivation of c-Ge with hydrogenated amorphous and microcrystalline Si and correlate the passivation quality with the electrical performance of the HJ solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84864225260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864225260&partnerID=8YFLogxK

U2 - 10.1063/1.4737166

DO - 10.1063/1.4737166

M3 - Article

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 032102

ER -