High device yield carbon nanotube NFETs for high-performance logic applications

Davood Shahrjerdi, Aaron D. Franklin, Satoshi Oida, George S. Tulevski, Shu Jen Han, James B. Hannon, Wilfried Haensch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
DOIs
StatePublished - 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

Fingerprint

Carbon Nanotubes
Field effect transistors
logic
Carbon nanotubes
field effect transistors
Metals
carbon nanotubes
Erbium
Lanthanum
lanthanum
metals
erbium
electric contacts
Demonstrations
optimization
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Shahrjerdi, D., Franklin, A. D., Oida, S., Tulevski, G. S., Han, S. J., Hannon, J. B., & Haensch, W. (2011). High device yield carbon nanotube NFETs for high-performance logic applications. In 2011 International Electron Devices Meeting, IEDM 2011 [6131596] https://doi.org/10.1109/IEDM.2011.6131596

High device yield carbon nanotube NFETs for high-performance logic applications. / Shahrjerdi, Davood; Franklin, Aaron D.; Oida, Satoshi; Tulevski, George S.; Han, Shu Jen; Hannon, James B.; Haensch, Wilfried.

2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131596.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shahrjerdi, D, Franklin, AD, Oida, S, Tulevski, GS, Han, SJ, Hannon, JB & Haensch, W 2011, High device yield carbon nanotube NFETs for high-performance logic applications. in 2011 International Electron Devices Meeting, IEDM 2011., 6131596, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131596
Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB et al. High device yield carbon nanotube NFETs for high-performance logic applications. In 2011 International Electron Devices Meeting, IEDM 2011. 2011. 6131596 https://doi.org/10.1109/IEDM.2011.6131596
Shahrjerdi, Davood ; Franklin, Aaron D. ; Oida, Satoshi ; Tulevski, George S. ; Han, Shu Jen ; Hannon, James B. ; Haensch, Wilfried. / High device yield carbon nanotube NFETs for high-performance logic applications. 2011 International Electron Devices Meeting, IEDM 2011. 2011.
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