Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition

SeongHo Jeong, Eray Aydil

Research output: Contribution to journalArticle

Abstract

Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.

Original languageEnglish (US)
Pages (from-to)4188-4192
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number17
DOIs
StatePublished - Aug 15 2009

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Organic Chemicals
Zinc Oxide
Organic chemicals
Zinc oxide
Epitaxial growth
zinc oxides
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
Thin films
thin films
Oxide films
oxides
p-n junctions
epitaxy
Oxides
Copper
Solar cells
Diodes
low pressure

Keywords

  • A1. X-ray diffraction
  • A3. Metal organic chemical vapor deposition
  • A3. Solid phase epitaxy
  • B1. Oxides
  • B2. Semiconducting materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Heteroepitaxial growth of Cu2O thin film on ZnO by metal organic chemical vapor deposition. / Jeong, SeongHo; Aydil, Eray.

In: Journal of Crystal Growth, Vol. 311, No. 17, 15.08.2009, p. 4188-4192.

Research output: Contribution to journalArticle

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abstract = "Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.",
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N2 - Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.

AB - Cuprous oxide (Cu2O) thin films were grown epitaxially on c-axis-oriented polycrystalline zinc oxide (ZnO) thin films by low-pressure metal organic chemical vapor deposition (MOCVD) from Copper(II) hexafluoroacetylacetonate [Cu(C5HF6O2)2] at various substrate temperatures, between 250 and 400 °C, and pressures, between 0.6 and 2.1 Torr. Polycrystalline thin films of Cu2O grow as single phase with [1 1 0] axis aligned perpendicular to the ZnO surface and with in-plane rotational alignment due to (2 2 0)Cu2O∥(0 0 0 2)ZnO; [0 0 1]Cu2O∥[1 2̄ 1 0]ZnO epitaxy. The resulting interface is rectifying and may be suitable for oxide-based p-n junction solar cells or diodes.

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