Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric

Davood Shahrjerdi, J. Nah, B. Hekmatshoar, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee

Research output: Contribution to journalArticle

Abstract

We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm2 /V s), in agreement with inherent high carrier mobility of electrons in III-V materials.

Original languageEnglish (US)
Article number213506
JournalApplied Physics Letters
Volume97
Issue number21
DOIs
StatePublished - Nov 22 2010

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electron mobility
field effect transistors
augmentation
carrier mobility
transistors
trapping
inversions
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric. / Shahrjerdi, Davood; Nah, J.; Hekmatshoar, B.; Akyol, T.; Ramon, M.; Tutuc, E.; Banerjee, S. K.

In: Applied Physics Letters, Vol. 97, No. 21, 213506, 22.11.2010.

Research output: Contribution to journalArticle

Shahrjerdi, Davood ; Nah, J. ; Hekmatshoar, B. ; Akyol, T. ; Ramon, M. ; Tutuc, E. ; Banerjee, S. K. / Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric. In: Applied Physics Letters. 2010 ; Vol. 97, No. 21.
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