Growth of fractal crystals in amorphous GeSe2 films

Gy Radnoczi, T. Vicsek, L. M. Sander, D. Grier

    Research output: Contribution to journalArticle

    Abstract

    We present the first study of fractal growth in a solid-solid phase transition. A highly ramified, randomly branched crystalline phase was obtained by heating thin amorphous GeSe2 films. Our result for the fractal dimension of the above structure, D 1.7, is in agreement with that of two-dimensional diffusion-limited aggregates. Possible mechanisms resulting in fractal growth are discussed.

    Original languageEnglish (US)
    Pages (from-to)4012-4015
    Number of pages4
    JournalPhysical Review A
    Volume35
    Issue number9
    DOIs
    StatePublished - 1987

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    fractals
    crystals
    solid phases
    heating

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Atomic and Molecular Physics, and Optics

    Cite this

    Radnoczi, G., Vicsek, T., Sander, L. M., & Grier, D. (1987). Growth of fractal crystals in amorphous GeSe2 films. Physical Review A, 35(9), 4012-4015. https://doi.org/10.1103/PhysRevA.35.4012

    Growth of fractal crystals in amorphous GeSe2 films. / Radnoczi, Gy; Vicsek, T.; Sander, L. M.; Grier, D.

    In: Physical Review A, Vol. 35, No. 9, 1987, p. 4012-4015.

    Research output: Contribution to journalArticle

    Radnoczi, G, Vicsek, T, Sander, LM & Grier, D 1987, 'Growth of fractal crystals in amorphous GeSe2 films', Physical Review A, vol. 35, no. 9, pp. 4012-4015. https://doi.org/10.1103/PhysRevA.35.4012
    Radnoczi, Gy ; Vicsek, T. ; Sander, L. M. ; Grier, D. / Growth of fractal crystals in amorphous GeSe2 films. In: Physical Review A. 1987 ; Vol. 35, No. 9. pp. 4012-4015.
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