Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor

Atomic-scale analysis

Saravanapriyan Sriraman, Eray Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticle

Abstract

A computational analysis of the growth of a-Si:H films on an H-terminated Si(001)-(2×1) substrate at a temperature of 500 K through MD simulations of repeated SiH2 radical impingement. The important reactions during film growth were identified through detailed visualization of the radical trajectories. Detailed structural and chemical characterization of the deposited film based on the evolution of the structure of the film, surface morphology and roughness, surface reactivity, and surface composition showed that the deposited films have low dangling-bond densities, high surface H coverage, rough surface morphologies, voids, and columnar structures.

Original languageEnglish (US)
Pages (from-to)1792-1805
Number of pages14
JournalJournal of Applied Physics
Volume95
Issue number4
DOIs
StatePublished - Feb 15 2004

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amorphous silicon
thin films
impingement
voids
surface roughness
reactivity
trajectories
simulation
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Growth and characterization of hydrogenated amorphous silicon thin films from SiH2 radical precursor : Atomic-scale analysis. / Sriraman, Saravanapriyan; Aydil, Eray; Maroudas, Dimitrios.

In: Journal of Applied Physics, Vol. 95, No. 4, 15.02.2004, p. 1792-1805.

Research output: Contribution to journalArticle

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