Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

Ghada Dushaq, Mahmoud Rasras, Ammar Nayfeh

Research output: Contribution to journalArticle

Abstract

In this paper, Ge metal-oxide-semiconductor capacitors (MOSCAPs) are fabricated on Si using a low temperature two-step deposition technique by radio frequency plasma enhanced chemical vapor deposition. The MOSCAP gate stack consists of atomic layer deposition of Al2O3 as the gate oxide and a Ti/Al metal gate electrode. The electrical characteristics of 9 nm Al2O3/i-Ge/Si MOSCAPs exhibit an n-type (p-channel) behavior and normal high frequency C-V responses. In addition to CV measurements, the gate leakage versus the applied voltage is measured and discussed. Moreover, the electrical behavior is discussed in terms of the material and interface quality. The Ge/high-k interface trap density versus the surface potential is extracted using the most commonly used methods in detemining the interface traps based on the capacitance-voltage (C-V) curves. The discussion included the Dit calculation from the conductance method, the high-low frequency (Castagné-Vapaille) method, and the Terman (high-frequency) method. Furthermore, the origins of the discrepancies in the interface trap densities determined from the different methods are discussed. The study of the post annealed Ge layers at different temperatures in H2 and N2 gas ambient revealed an improved electrical and transport properties of the films treated at T < 600 °C. Also, samples annealed at <550 °C show the lowest threading dislocation density of ∼1 × 106 cm-2. The low temperature processing of Ge/Si demonstrates a great potential for p-channel transistor applications in a monolithically integrated CMOS platform.

Original languageEnglish (US)
Article number405107
JournalJournal of Physics D: Applied Physics
Volume50
Issue number40
DOIs
StatePublished - Sep 12 2017

Fingerprint

Germanium
MOS capacitors
Silicon
Plasma enhanced chemical vapor deposition
germanium
capacitors
Metals
metal oxide semiconductors
Capacitors
traps
silicon
Electric potential
electric potential
Capacitance
capacitance
Temperature
Atomic layer deposition
Surface potential
atomic layer epitaxy
Transport properties

Keywords

  • CMOS integration
  • germanium-on-silicon
  • MOS capacitors
  • RF-PECVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD. / Dushaq, Ghada; Rasras, Mahmoud; Nayfeh, Ammar.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 40, 405107, 12.09.2017.

Research output: Contribution to journalArticle

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