Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD

Ghada Dushaq, Ammar Nayfeh, Mahmoud Rasras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500° C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics, FiO 2017
PublisherOSA - The Optical Society
VolumePart F66-FiO 2017
ISBN (Electronic)9781557528209
DOIs
StatePublished - Jan 1 2017
EventFrontiers in Optics, FiO 2017 - Washington, United States
Duration: Sep 18 2017Sep 21 2017

Other

OtherFrontiers in Optics, FiO 2017
CountryUnited States
CityWashington
Period9/18/179/21/17

Fingerprint

Germanium
Silicon
Plasma enhanced chemical vapor deposition
Photodetectors
Metals
Semiconductor materials
Temperature
Electric properties
Optical properties
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Cite this

Dushaq, G., Nayfeh, A., & Rasras, M. (2017). Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD. In Frontiers in Optics, FiO 2017 (Vol. Part F66-FiO 2017). OSA - The Optical Society. https://doi.org/10.1364/FIO.2017.JW4A.42

Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD. / Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud.

Frontiers in Optics, FiO 2017. Vol. Part F66-FiO 2017 OSA - The Optical Society, 2017.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dushaq, G, Nayfeh, A & Rasras, M 2017, Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD. in Frontiers in Optics, FiO 2017. vol. Part F66-FiO 2017, OSA - The Optical Society, Frontiers in Optics, FiO 2017, Washington, United States, 9/18/17. https://doi.org/10.1364/FIO.2017.JW4A.42
Dushaq G, Nayfeh A, Rasras M. Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD. In Frontiers in Optics, FiO 2017. Vol. Part F66-FiO 2017. OSA - The Optical Society. 2017 https://doi.org/10.1364/FIO.2017.JW4A.42
Dushaq, Ghada ; Nayfeh, Ammar ; Rasras, Mahmoud. / Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD. Frontiers in Optics, FiO 2017. Vol. Part F66-FiO 2017 OSA - The Optical Society, 2017.
@inproceedings{665bdfb5058f48408b7b1626461642c9,
title = "Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD",
abstract = "This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500° C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.",
author = "Ghada Dushaq and Ammar Nayfeh and Mahmoud Rasras",
year = "2017",
month = "1",
day = "1",
doi = "10.1364/FIO.2017.JW4A.42",
language = "English (US)",
volume = "Part F66-FiO 2017",
booktitle = "Frontiers in Optics, FiO 2017",
publisher = "OSA - The Optical Society",

}

TY - GEN

T1 - Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD

AU - Dushaq, Ghada

AU - Nayfeh, Ammar

AU - Rasras, Mahmoud

PY - 2017/1/1

Y1 - 2017/1/1

N2 - This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500° C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.

AB - This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500° C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.

UR - http://www.scopus.com/inward/record.url?scp=85035145810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85035145810&partnerID=8YFLogxK

U2 - 10.1364/FIO.2017.JW4A.42

DO - 10.1364/FIO.2017.JW4A.42

M3 - Conference contribution

VL - Part F66-FiO 2017

BT - Frontiers in Optics, FiO 2017

PB - OSA - The Optical Society

ER -