Gate-voltage tunability of plasmons in single-layer graphene structures

Analytical description, impact of interface states, and concepts for terahertz devices

Shaloo Rakheja, P. Sengupta

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)113-121
JournalIEEE Transactions on Nanotechnology
Volume15
Issue number1
StatePublished - Jan 2016

Cite this

@article{3f82a9b254cd460ab65c301e488827ea,
title = "Gate-voltage tunability of plasmons in single-layer graphene structures: Analytical description, impact of interface states, and concepts for terahertz devices",
author = "Shaloo Rakheja and P. Sengupta",
year = "2016",
month = "1",
language = "English (US)",
volume = "15",
pages = "113--121",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Gate-voltage tunability of plasmons in single-layer graphene structures

T2 - Analytical description, impact of interface states, and concepts for terahertz devices

AU - Rakheja, Shaloo

AU - Sengupta, P.

PY - 2016/1

Y1 - 2016/1

M3 - Article

VL - 15

SP - 113

EP - 121

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 1

ER -