GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric

Fabrication and characterization

Davood Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, S. K. Banerjee

Research output: Contribution to journalArticle

Abstract

In this letter, we have investigated the physical and electrical characteristics of atomic layer deposition of Hf O2 on GaAs substrates. X-ray photoelectron spectroscopy (XPS) analysis revealed no significant reduction of arsenic oxides upon deposition of Hf O2 on GaAs using tetrakis(dimethyl-amino) hafnium [Hf (N Me2) 4] as the metallic precursor. However, XPS confirmed the absence of arsenic oxides at the interface of Hf O2 and sulfide-treated GaAs. High-resolution transmission electron microcopy analysis verified a smooth interface between Hf O2 and sulfur-passivated GaAs. In addition, frequency dispersion behavior of capacitors on p -type GaAs substrates was remarkably improved by employing an appropriate surface chemical treatment.

Original languageEnglish (US)
Article number193503
JournalApplied Physics Letters
Volume91
Issue number19
DOIs
StatePublished - 2007

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atomic layer epitaxy
arsenic
metal oxide semiconductors
capacitors
photoelectron spectroscopy
fabrication
oxides
hafnium
sulfides
x rays
sulfur
high resolution
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric : Fabrication and characterization. / Shahrjerdi, Davood; Garcia-Gutierrez, D. I.; Akyol, T.; Bank, S. R.; Tutuc, E.; Lee, J. C.; Banerjee, S. K.

In: Applied Physics Letters, Vol. 91, No. 19, 193503, 2007.

Research output: Contribution to journalArticle

Shahrjerdi, Davood ; Garcia-Gutierrez, D. I. ; Akyol, T. ; Bank, S. R. ; Tutuc, E. ; Lee, J. C. ; Banerjee, S. K. / GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric : Fabrication and characterization. In: Applied Physics Letters. 2007 ; Vol. 91, No. 19.
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