Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks

Saurabh J. Ullal, Harmeet Singh, John Daugherty, Vahid Vahedi, Eray Aydil

Research output: Contribution to journalArticle

Abstract

A study was conducted on the chemical nature of the composite films depositing on the reactor walls during STI etching using plasma and surface diagnostics. However, the composite film can be removed by using an O2 plasma maintained under conditions where the gas residence time was sufficiently high. In this case, the removal of the composite film proceeds by etching of the fluorocarbon film by O in the O2 plasma, and subsequent etching of the halogenated silicon oxide component of the film by F produced by electron impact dissociation of the fluorocarbon etching products in the gas phase.

Original languageEnglish (US)
Pages (from-to)1939-1946
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number5
DOIs
StatePublished - Sep 1 2002

Fingerprint

Fluorocarbons
Plasma etching
fluorocarbons
Silicon oxides
Composite films
plasma etching
silicon oxides
oxide films
Etching
chambers
composite materials
etching
Composite materials
Plasmas
Gases
plasma diagnostics
Electrons
electron impact
reactors
dissociation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{bf78fe453f944f3dbeac90064cbf3c83,
title = "Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks",
abstract = "A study was conducted on the chemical nature of the composite films depositing on the reactor walls during STI etching using plasma and surface diagnostics. However, the composite film can be removed by using an O2 plasma maintained under conditions where the gas residence time was sufficiently high. In this case, the removal of the composite film proceeds by etching of the fluorocarbon film by O in the O2 plasma, and subsequent etching of the halogenated silicon oxide component of the film by F produced by electron impact dissociation of the fluorocarbon etching products in the gas phase.",
author = "Ullal, {Saurabh J.} and Harmeet Singh and John Daugherty and Vahid Vahedi and Eray Aydil",
year = "2002",
month = "9",
day = "1",
doi = "10.1116/1.1502698",
language = "English (US)",
volume = "20",
pages = "1939--1946",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "5",

}

TY - JOUR

T1 - Formation and removal of composite halogenated silicon oxide and fluorocarbon films deposited on chamber walls during plasma etching of multiple film stacks

AU - Ullal, Saurabh J.

AU - Singh, Harmeet

AU - Daugherty, John

AU - Vahedi, Vahid

AU - Aydil, Eray

PY - 2002/9/1

Y1 - 2002/9/1

N2 - A study was conducted on the chemical nature of the composite films depositing on the reactor walls during STI etching using plasma and surface diagnostics. However, the composite film can be removed by using an O2 plasma maintained under conditions where the gas residence time was sufficiently high. In this case, the removal of the composite film proceeds by etching of the fluorocarbon film by O in the O2 plasma, and subsequent etching of the halogenated silicon oxide component of the film by F produced by electron impact dissociation of the fluorocarbon etching products in the gas phase.

AB - A study was conducted on the chemical nature of the composite films depositing on the reactor walls during STI etching using plasma and surface diagnostics. However, the composite film can be removed by using an O2 plasma maintained under conditions where the gas residence time was sufficiently high. In this case, the removal of the composite film proceeds by etching of the fluorocarbon film by O in the O2 plasma, and subsequent etching of the halogenated silicon oxide component of the film by F produced by electron impact dissociation of the fluorocarbon etching products in the gas phase.

UR - http://www.scopus.com/inward/record.url?scp=0036026360&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036026360&partnerID=8YFLogxK

U2 - 10.1116/1.1502698

DO - 10.1116/1.1502698

M3 - Article

VL - 20

SP - 1939

EP - 1946

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 5

ER -