Flexible InGaP/(In)GaAs tandem solar cells with very high specific power

Davood Shahrjerdi, Stephen W. Bedell, Can Bayram, Devendra Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we demonstrate a new scheme for realizing flexible double-junction InGaP/(In)GaAs tandem solar cells with very high specific power of ∼2000W/kg at one sun intensity. The controlled spalling technique is employed because of its simplicity to separate the solar cell structure from the growth substrate. Furthermore, the entirety of the elements used for the layer transfer process is incorporated in the final device structure. The combination of our new integration scheme with the possibility of the substrate reuse offers a viable pathway to further reducing the processing cost associated with the fabrication of III-V solar cell devices. Furthermore, the strikingly high specific power of our devices makes them suitable for portable applications with stringent requirements on the size and weight of the photovoltaic solar cells.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2805-2808
Number of pages4
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Solar cells
Spalling
Substrates
Sun
Fabrication
Processing
Costs

Keywords

  • Flexible photovoltaic
  • Layer transfer
  • Light-weight solar cell

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Shahrjerdi, D., Bedell, S. W., Bayram, C., & Sadana, D. (2013). Flexible InGaP/(In)GaAs tandem solar cells with very high specific power. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2805-2808). [6745055] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745055

Flexible InGaP/(In)GaAs tandem solar cells with very high specific power. / Shahrjerdi, Davood; Bedell, Stephen W.; Bayram, Can; Sadana, Devendra.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2805-2808 6745055.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shahrjerdi, D, Bedell, SW, Bayram, C & Sadana, D 2013, Flexible InGaP/(In)GaAs tandem solar cells with very high specific power. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6745055, Institute of Electrical and Electronics Engineers Inc., pp. 2805-2808, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6745055
Shahrjerdi D, Bedell SW, Bayram C, Sadana D. Flexible InGaP/(In)GaAs tandem solar cells with very high specific power. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2805-2808. 6745055 https://doi.org/10.1109/PVSC.2013.6745055
Shahrjerdi, Davood ; Bedell, Stephen W. ; Bayram, Can ; Sadana, Devendra. / Flexible InGaP/(In)GaAs tandem solar cells with very high specific power. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2805-2808
@inproceedings{6b3a9da0a39345a280f20c90a9832b10,
title = "Flexible InGaP/(In)GaAs tandem solar cells with very high specific power",
abstract = "In this work, we demonstrate a new scheme for realizing flexible double-junction InGaP/(In)GaAs tandem solar cells with very high specific power of ∼2000W/kg at one sun intensity. The controlled spalling technique is employed because of its simplicity to separate the solar cell structure from the growth substrate. Furthermore, the entirety of the elements used for the layer transfer process is incorporated in the final device structure. The combination of our new integration scheme with the possibility of the substrate reuse offers a viable pathway to further reducing the processing cost associated with the fabrication of III-V solar cell devices. Furthermore, the strikingly high specific power of our devices makes them suitable for portable applications with stringent requirements on the size and weight of the photovoltaic solar cells.",
keywords = "Flexible photovoltaic, Layer transfer, Light-weight solar cell",
author = "Davood Shahrjerdi and Bedell, {Stephen W.} and Can Bayram and Devendra Sadana",
year = "2013",
doi = "10.1109/PVSC.2013.6745055",
language = "English (US)",
isbn = "9781479932993",
pages = "2805--2808",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Flexible InGaP/(In)GaAs tandem solar cells with very high specific power

AU - Shahrjerdi, Davood

AU - Bedell, Stephen W.

AU - Bayram, Can

AU - Sadana, Devendra

PY - 2013

Y1 - 2013

N2 - In this work, we demonstrate a new scheme for realizing flexible double-junction InGaP/(In)GaAs tandem solar cells with very high specific power of ∼2000W/kg at one sun intensity. The controlled spalling technique is employed because of its simplicity to separate the solar cell structure from the growth substrate. Furthermore, the entirety of the elements used for the layer transfer process is incorporated in the final device structure. The combination of our new integration scheme with the possibility of the substrate reuse offers a viable pathway to further reducing the processing cost associated with the fabrication of III-V solar cell devices. Furthermore, the strikingly high specific power of our devices makes them suitable for portable applications with stringent requirements on the size and weight of the photovoltaic solar cells.

AB - In this work, we demonstrate a new scheme for realizing flexible double-junction InGaP/(In)GaAs tandem solar cells with very high specific power of ∼2000W/kg at one sun intensity. The controlled spalling technique is employed because of its simplicity to separate the solar cell structure from the growth substrate. Furthermore, the entirety of the elements used for the layer transfer process is incorporated in the final device structure. The combination of our new integration scheme with the possibility of the substrate reuse offers a viable pathway to further reducing the processing cost associated with the fabrication of III-V solar cell devices. Furthermore, the strikingly high specific power of our devices makes them suitable for portable applications with stringent requirements on the size and weight of the photovoltaic solar cells.

KW - Flexible photovoltaic

KW - Layer transfer

KW - Light-weight solar cell

UR - http://www.scopus.com/inward/record.url?scp=84896453496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896453496&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6745055

DO - 10.1109/PVSC.2013.6745055

M3 - Conference contribution

SN - 9781479932993

SP - 2805

EP - 2808

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

ER -