Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

Robert L. Kosut, Russel Caflisch, Mark Gyure, David G. Meyer, Andrew Engelmann

Research output: Contribution to journalArticle

Abstract

This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.

Original languageEnglish (US)
Pages (from-to)4204-4209
Number of pages6
JournalProceedings of the IEEE Conference on Decision and Control
Volume4
StatePublished - 1999

Fingerprint

Semiconductor growth
III-V Semiconductors
Epitaxy
Molecular beam epitaxy
Feedback Control
Feedback control
Feedback
Epitaxial Growth
Atoms
Surface Morphology
Robust Design
Epitaxial growth
Model
Surface morphology
Semiconductor materials
Sensor
III-V semiconductors
Sensors
Processing
Modeling

ASJC Scopus subject areas

  • Chemical Health and Safety
  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy. / Kosut, Robert L.; Caflisch, Russel; Gyure, Mark; Meyer, David G.; Engelmann, Andrew.

In: Proceedings of the IEEE Conference on Decision and Control, Vol. 4, 1999, p. 4204-4209.

Research output: Contribution to journalArticle

Kosut, Robert L. ; Caflisch, Russel ; Gyure, Mark ; Meyer, David G. ; Engelmann, Andrew. / Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy. In: Proceedings of the IEEE Conference on Decision and Control. 1999 ; Vol. 4. pp. 4204-4209.
@article{b9349349c8534288a85e8ea15644048e,
title = "Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy",
abstract = "This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.",
author = "Kosut, {Robert L.} and Russel Caflisch and Mark Gyure and Meyer, {David G.} and Andrew Engelmann",
year = "1999",
language = "English (US)",
volume = "4",
pages = "4204--4209",
journal = "Proceedings of the IEEE Conference on Decision and Control",
issn = "0191-2216",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Feedback control of morphology during III-V semiconductor growth by molecular beam epitaxy

AU - Kosut, Robert L.

AU - Caflisch, Russel

AU - Gyure, Mark

AU - Meyer, David G.

AU - Engelmann, Andrew

PY - 1999

Y1 - 1999

N2 - This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.

AB - This paper addresses the modeling and control of epitaxial growth of III-V semiconductor material by Molecular Beam Epitaxy. To reliably achieve the required features, processing must use fundamental understanding of the atom-by-atom assembly of these structures and careful feedback design. One problem is to develop a model relating morphology, sensor variables, and control variables. Another is to design robust feedback for achieving a desired surface morphology. A novel new model is developed and presented here as well as modifications to a previously published model. Feedback design using both models is conducted; simulation results are shown.

UR - http://www.scopus.com/inward/record.url?scp=0033325164&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033325164&partnerID=8YFLogxK

M3 - Article

VL - 4

SP - 4204

EP - 4209

JO - Proceedings of the IEEE Conference on Decision and Control

JF - Proceedings of the IEEE Conference on Decision and Control

SN - 0191-2216

ER -