Feature-scale model of Si etching in SF 6 plasma and comparison with experiments

Rodolfo Jun Belen, Sergi Gomez, Mark Kiehlbauch, David Cooperberg, Eray Aydil

Research output: Contribution to journalArticle

Abstract

We have developed a semiempirical feature scale model of Si etching in SF6 plasma, which incorporates the addition of small amounts of O in the discharge coming from the etching of the oxide mask and quartz window. The degrees of freedom in the model are reduced by using information from plasma diagnostics and previously published data to estimate the ion flux, the ion energy and angle distributions, and the relative F and O fluxes. Experimentally inaccessible parameters such as the F sticking coefficient, chemical etch rate constant, and the ion-enhanced etch yield are determined by matching simulated feature profiles with those obtained from carefully designed etching experiments. Excellent agreement between experiments and simulations is obtained.

Original languageEnglish (US)
Pages (from-to)99-113
Number of pages15
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume23
Issue number1
DOIs
StatePublished - Jan 1 2005

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scale models
Etching
etching
Ions
Plasmas
Fluxes
Plasma diagnostics
ions
Quartz
plasma diagnostics
Experiments
Oxides
Masks
Rate constants
energy distribution
masks
quartz
degrees of freedom
oxides
coefficients

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Feature-scale model of Si etching in SF 6 plasma and comparison with experiments. / Belen, Rodolfo Jun; Gomez, Sergi; Kiehlbauch, Mark; Cooperberg, David; Aydil, Eray.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, No. 1, 01.01.2005, p. 99-113.

Research output: Contribution to journalArticle

Belen, Rodolfo Jun ; Gomez, Sergi ; Kiehlbauch, Mark ; Cooperberg, David ; Aydil, Eray. / Feature-scale model of Si etching in SF 6 plasma and comparison with experiments. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2005 ; Vol. 23, No. 1. pp. 99-113.
@article{dc96a5da20cb485eadfe58a0444285df,
title = "Feature-scale model of Si etching in SF 6 plasma and comparison with experiments",
abstract = "We have developed a semiempirical feature scale model of Si etching in SF6 plasma, which incorporates the addition of small amounts of O in the discharge coming from the etching of the oxide mask and quartz window. The degrees of freedom in the model are reduced by using information from plasma diagnostics and previously published data to estimate the ion flux, the ion energy and angle distributions, and the relative F and O fluxes. Experimentally inaccessible parameters such as the F sticking coefficient, chemical etch rate constant, and the ion-enhanced etch yield are determined by matching simulated feature profiles with those obtained from carefully designed etching experiments. Excellent agreement between experiments and simulations is obtained.",
author = "Belen, {Rodolfo Jun} and Sergi Gomez and Mark Kiehlbauch and David Cooperberg and Eray Aydil",
year = "2005",
month = "1",
day = "1",
doi = "10.1116/1.1830495",
language = "English (US)",
volume = "23",
pages = "99--113",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Feature-scale model of Si etching in SF 6 plasma and comparison with experiments

AU - Belen, Rodolfo Jun

AU - Gomez, Sergi

AU - Kiehlbauch, Mark

AU - Cooperberg, David

AU - Aydil, Eray

PY - 2005/1/1

Y1 - 2005/1/1

N2 - We have developed a semiempirical feature scale model of Si etching in SF6 plasma, which incorporates the addition of small amounts of O in the discharge coming from the etching of the oxide mask and quartz window. The degrees of freedom in the model are reduced by using information from plasma diagnostics and previously published data to estimate the ion flux, the ion energy and angle distributions, and the relative F and O fluxes. Experimentally inaccessible parameters such as the F sticking coefficient, chemical etch rate constant, and the ion-enhanced etch yield are determined by matching simulated feature profiles with those obtained from carefully designed etching experiments. Excellent agreement between experiments and simulations is obtained.

AB - We have developed a semiempirical feature scale model of Si etching in SF6 plasma, which incorporates the addition of small amounts of O in the discharge coming from the etching of the oxide mask and quartz window. The degrees of freedom in the model are reduced by using information from plasma diagnostics and previously published data to estimate the ion flux, the ion energy and angle distributions, and the relative F and O fluxes. Experimentally inaccessible parameters such as the F sticking coefficient, chemical etch rate constant, and the ion-enhanced etch yield are determined by matching simulated feature profiles with those obtained from carefully designed etching experiments. Excellent agreement between experiments and simulations is obtained.

UR - http://www.scopus.com/inward/record.url?scp=31144458555&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31144458555&partnerID=8YFLogxK

U2 - 10.1116/1.1830495

DO - 10.1116/1.1830495

M3 - Article

AN - SCOPUS:31144458555

VL - 23

SP - 99

EP - 113

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 1

ER -