Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric

Davood Shahrjerdi, N. Nuntawong, G. Balakrishnan, D. I. Garcia-Gutierrez, A. Khoshakhlagh, E. Tutuc, D. Huffaker, J. C. Lee, S. K. Banerjee

Research output: Contribution to journalArticle

Abstract

In this article, we have studied fabrication and characterization of GaAs metal-oxide-semiconductor (MOS) capacitors with Al2 O3 gate dielectric. 300 nm thick GaAs layers were grown epitaxially on Ge Si1-x Gex Si substrates. Cross-sectional transmission electron microscopy (TEM) confirmed a threading dislocation density of ∼ 107 cm2 in the GaAs layer. In addition, it was observed that threading dislocations were mainly confined within the first ∼50 nm of the GaAs layer, adjacent to the Ge film. Interfacial self-cleaning attribute of GaAs upon atomic layer deposition of Al2 O3 was confirmed by x-ray photoelectron spectroscopy (XPS) analysis. However, the Al2 O3 GaAs interface properties were remarkably improved by GaAs native removal in dilute HF (1%) followed by sulfur treatment in (N H4)2 S, substantiated by probing electrical characteristics of the MOS capacitors and cross-sectional TEM analysis. Thermodynamic properties of Al2 O3 /sulfide-treated GaAs interface was also studied by monitoring the C-V characteristics of GaAs MOS capacitors implying excellent thermal stability of the Al2 O3 GaAs interface.

Original languageEnglish (US)
Pages (from-to)1182-1186
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume26
Issue number3
DOIs
StatePublished - 2008

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Gate dielectrics
metal oxide semiconductors
capacitors
Capacitors
Fabrication
fabrication
Substrates
Metals
Transmission electron microscopy
transmission electron microscopy
Atomic layer deposition
Photoelectron spectroscopy
atomic layer epitaxy
cleaning
x ray spectroscopy
sulfides
Cleaning
Thermodynamic stability
thermal stability
sulfur

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric. / Shahrjerdi, Davood; Nuntawong, N.; Balakrishnan, G.; Garcia-Gutierrez, D. I.; Khoshakhlagh, A.; Tutuc, E.; Huffaker, D.; Lee, J. C.; Banerjee, S. K.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 3, 2008, p. 1182-1186.

Research output: Contribution to journalArticle

Shahrjerdi, Davood ; Nuntawong, N. ; Balakrishnan, G. ; Garcia-Gutierrez, D. I. ; Khoshakhlagh, A. ; Tutuc, E. ; Huffaker, D. ; Lee, J. C. ; Banerjee, S. K. / Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2008 ; Vol. 26, No. 3. pp. 1182-1186.
@article{a8bad3b497e34c28a27f4bc33fe92eac,
title = "Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric",
abstract = "In this article, we have studied fabrication and characterization of GaAs metal-oxide-semiconductor (MOS) capacitors with Al2 O3 gate dielectric. 300 nm thick GaAs layers were grown epitaxially on Ge Si1-x Gex Si substrates. Cross-sectional transmission electron microscopy (TEM) confirmed a threading dislocation density of ∼ 107 cm2 in the GaAs layer. In addition, it was observed that threading dislocations were mainly confined within the first ∼50 nm of the GaAs layer, adjacent to the Ge film. Interfacial self-cleaning attribute of GaAs upon atomic layer deposition of Al2 O3 was confirmed by x-ray photoelectron spectroscopy (XPS) analysis. However, the Al2 O3 GaAs interface properties were remarkably improved by GaAs native removal in dilute HF (1{\%}) followed by sulfur treatment in (N H4)2 S, substantiated by probing electrical characteristics of the MOS capacitors and cross-sectional TEM analysis. Thermodynamic properties of Al2 O3 /sulfide-treated GaAs interface was also studied by monitoring the C-V characteristics of GaAs MOS capacitors implying excellent thermal stability of the Al2 O3 GaAs interface.",
author = "Davood Shahrjerdi and N. Nuntawong and G. Balakrishnan and Garcia-Gutierrez, {D. I.} and A. Khoshakhlagh and E. Tutuc and D. Huffaker and Lee, {J. C.} and Banerjee, {S. K.}",
year = "2008",
doi = "10.1116/1.2835061",
language = "English (US)",
volume = "26",
pages = "1182--1186",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric

AU - Shahrjerdi, Davood

AU - Nuntawong, N.

AU - Balakrishnan, G.

AU - Garcia-Gutierrez, D. I.

AU - Khoshakhlagh, A.

AU - Tutuc, E.

AU - Huffaker, D.

AU - Lee, J. C.

AU - Banerjee, S. K.

PY - 2008

Y1 - 2008

N2 - In this article, we have studied fabrication and characterization of GaAs metal-oxide-semiconductor (MOS) capacitors with Al2 O3 gate dielectric. 300 nm thick GaAs layers were grown epitaxially on Ge Si1-x Gex Si substrates. Cross-sectional transmission electron microscopy (TEM) confirmed a threading dislocation density of ∼ 107 cm2 in the GaAs layer. In addition, it was observed that threading dislocations were mainly confined within the first ∼50 nm of the GaAs layer, adjacent to the Ge film. Interfacial self-cleaning attribute of GaAs upon atomic layer deposition of Al2 O3 was confirmed by x-ray photoelectron spectroscopy (XPS) analysis. However, the Al2 O3 GaAs interface properties were remarkably improved by GaAs native removal in dilute HF (1%) followed by sulfur treatment in (N H4)2 S, substantiated by probing electrical characteristics of the MOS capacitors and cross-sectional TEM analysis. Thermodynamic properties of Al2 O3 /sulfide-treated GaAs interface was also studied by monitoring the C-V characteristics of GaAs MOS capacitors implying excellent thermal stability of the Al2 O3 GaAs interface.

AB - In this article, we have studied fabrication and characterization of GaAs metal-oxide-semiconductor (MOS) capacitors with Al2 O3 gate dielectric. 300 nm thick GaAs layers were grown epitaxially on Ge Si1-x Gex Si substrates. Cross-sectional transmission electron microscopy (TEM) confirmed a threading dislocation density of ∼ 107 cm2 in the GaAs layer. In addition, it was observed that threading dislocations were mainly confined within the first ∼50 nm of the GaAs layer, adjacent to the Ge film. Interfacial self-cleaning attribute of GaAs upon atomic layer deposition of Al2 O3 was confirmed by x-ray photoelectron spectroscopy (XPS) analysis. However, the Al2 O3 GaAs interface properties were remarkably improved by GaAs native removal in dilute HF (1%) followed by sulfur treatment in (N H4)2 S, substantiated by probing electrical characteristics of the MOS capacitors and cross-sectional TEM analysis. Thermodynamic properties of Al2 O3 /sulfide-treated GaAs interface was also studied by monitoring the C-V characteristics of GaAs MOS capacitors implying excellent thermal stability of the Al2 O3 GaAs interface.

UR - http://www.scopus.com/inward/record.url?scp=44649178533&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44649178533&partnerID=8YFLogxK

U2 - 10.1116/1.2835061

DO - 10.1116/1.2835061

M3 - Article

VL - 26

SP - 1182

EP - 1186

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -