Explanation of nMOSFET substrate current after hard gate oxide breakdown

B. Kaczer, R. Degraeve, A. De Keersgieter, Mahmoud Rasras, G. Groeseneken

    Research output: Contribution to journalConference article

    Abstract

    The origin of the substrate current in nMOSFET after hard gate oxide breakdown is studied as a function of the breakdown position. The breakdown path is modeled by a narrow (∼5 nm diameter) inclusion of highly doped n-type silicon in SiO2. Device simulations excellently reproduce all post-breakdown nMOSFET characteristics, including the substrate current behavior, for both gate-to-substrate and gate-to-extension breakdowns. The model also identifies the origin of impact ionization and recombination observed in emission spectra.

    Original languageEnglish (US)
    Pages (from-to)155-160
    Number of pages6
    JournalMicroelectronic Engineering
    Volume59
    Issue number1-4
    DOIs
    StatePublished - Nov 1 2001
    Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
    Duration: Jun 20 2001Jun 23 2001

    Fingerprint

    Oxides
    breakdown
    oxides
    Substrates
    Impact ionization
    Silicon
    emission spectra
    inclusions
    ionization
    silicon
    simulation

    Keywords

    • Bipolar transistor
    • Device simulation
    • Gate oxide breakdown
    • Hot electron effects
    • Impact ionization
    • MOSFET
    • Recombination
    • Substrate current

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

    Cite this

    Kaczer, B., Degraeve, R., De Keersgieter, A., Rasras, M., & Groeseneken, G. (2001). Explanation of nMOSFET substrate current after hard gate oxide breakdown. Microelectronic Engineering, 59(1-4), 155-160. https://doi.org/10.1016/S0167-9317(01)00659-1

    Explanation of nMOSFET substrate current after hard gate oxide breakdown. / Kaczer, B.; Degraeve, R.; De Keersgieter, A.; Rasras, Mahmoud; Groeseneken, G.

    In: Microelectronic Engineering, Vol. 59, No. 1-4, 01.11.2001, p. 155-160.

    Research output: Contribution to journalConference article

    Kaczer, B, Degraeve, R, De Keersgieter, A, Rasras, M & Groeseneken, G 2001, 'Explanation of nMOSFET substrate current after hard gate oxide breakdown', Microelectronic Engineering, vol. 59, no. 1-4, pp. 155-160. https://doi.org/10.1016/S0167-9317(01)00659-1
    Kaczer B, Degraeve R, De Keersgieter A, Rasras M, Groeseneken G. Explanation of nMOSFET substrate current after hard gate oxide breakdown. Microelectronic Engineering. 2001 Nov 1;59(1-4):155-160. https://doi.org/10.1016/S0167-9317(01)00659-1
    Kaczer, B. ; Degraeve, R. ; De Keersgieter, A. ; Rasras, Mahmoud ; Groeseneken, G. / Explanation of nMOSFET substrate current after hard gate oxide breakdown. In: Microelectronic Engineering. 2001 ; Vol. 59, No. 1-4. pp. 155-160.
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