Evidence of hole-optical-phonon interaction in degenerate silicon in tunneling measurements

E. L. Wolf

Research output: Contribution to journalArticle

Abstract

Tunneling from a metal into degenerate p-type silicon exhibits peaks in d2idV2 at biases eV=±ω0, where ω0 is the k=0 optical-phonon energy of the semiconductor. It is suggested that these peaks reflect modifications in the bulk semiconductor states at energies ω0 above and below the Fermi energy arising from hole-optical-phonon interaction. An additional peak near the optical-phonon frequency, but well resolved from it, is identified with vibrations of the boron acceptor impurity.

Original languageEnglish (US)
Pages (from-to)204-207
Number of pages4
JournalPhysical Review Letters
Volume20
Issue number5
DOIs
StatePublished - 1968

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silicon
interactions
energy
boron
impurities
vibration
metals

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  • Physics and Astronomy(all)

Cite this

Evidence of hole-optical-phonon interaction in degenerate silicon in tunneling measurements. / Wolf, E. L.

In: Physical Review Letters, Vol. 20, No. 5, 1968, p. 204-207.

Research output: Contribution to journalArticle

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