Etching of high aspect ratio structures in Si using SF 6/O 2 plasma

Sergi Gomez, Rodolfo Jim Belen, Mark Kiehlbauch, Eray Aydil

Research output: Contribution to journalArticle

Abstract

The etching mechanism of deep (∼10 μm) submicron diameter holes with high aspect ratios (>10) using plasmas maintained in mixtures of SF 6 and O 2 gases was investigated. A low-pressure, high-density, inductively coupled plasma etching reactor with a planar coil was used for the etching. The influence of SF 6-to-O 2 gas ratio, pressure, and rf-bias voltage on the etch rate and selectivity was also analyzed using Si wafers, which were patterned with 0.35-0.5 μm diameter holes in a SiO 2 mask. The etch rate and anisotropy were determined using the F-to-ion flux ratio and F-to-O flux ratio.

Original languageEnglish (US)
Pages (from-to)606-615
Number of pages10
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number3
DOIs
StatePublished - May 1 2004

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high aspect ratio
Aspect ratio
Etching
Gases
etching
Fluxes
Plasmas
pressure ratio
Plasma etching
Inductively coupled plasma
plasma etching
Bias voltage
gases
Masks
Anisotropy
coils
masks
low pressure
selectivity
reactors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Etching of high aspect ratio structures in Si using SF 6/O 2 plasma. / Gomez, Sergi; Belen, Rodolfo Jim; Kiehlbauch, Mark; Aydil, Eray.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 3, 01.05.2004, p. 606-615.

Research output: Contribution to journalArticle

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