Abstract
The etching mechanism of deep (∼10 μm) submicron diameter holes with high aspect ratios (>10) using plasmas maintained in mixtures of SF 6 and O 2 gases was investigated. A low-pressure, high-density, inductively coupled plasma etching reactor with a planar coil was used for the etching. The influence of SF 6-to-O 2 gas ratio, pressure, and rf-bias voltage on the etch rate and selectivity was also analyzed using Si wafers, which were patterned with 0.35-0.5 μm diameter holes in a SiO 2 mask. The etch rate and anisotropy were determined using the F-to-ion flux ratio and F-to-O flux ratio.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 606-615 |
| Number of pages | 10 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 22 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 1 2004 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
Cite this
Etching of high aspect ratio structures in Si using SF 6/O 2 plasma. / Gomez, Sergi; Belen, Rodolfo Jim; Kiehlbauch, Mark; Aydil, Eray.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 3, 01.05.2004, p. 606-615.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Etching of high aspect ratio structures in Si using SF 6/O 2 plasma
AU - Gomez, Sergi
AU - Belen, Rodolfo Jim
AU - Kiehlbauch, Mark
AU - Aydil, Eray
PY - 2004/5/1
Y1 - 2004/5/1
N2 - The etching mechanism of deep (∼10 μm) submicron diameter holes with high aspect ratios (>10) using plasmas maintained in mixtures of SF 6 and O 2 gases was investigated. A low-pressure, high-density, inductively coupled plasma etching reactor with a planar coil was used for the etching. The influence of SF 6-to-O 2 gas ratio, pressure, and rf-bias voltage on the etch rate and selectivity was also analyzed using Si wafers, which were patterned with 0.35-0.5 μm diameter holes in a SiO 2 mask. The etch rate and anisotropy were determined using the F-to-ion flux ratio and F-to-O flux ratio.
AB - The etching mechanism of deep (∼10 μm) submicron diameter holes with high aspect ratios (>10) using plasmas maintained in mixtures of SF 6 and O 2 gases was investigated. A low-pressure, high-density, inductively coupled plasma etching reactor with a planar coil was used for the etching. The influence of SF 6-to-O 2 gas ratio, pressure, and rf-bias voltage on the etch rate and selectivity was also analyzed using Si wafers, which were patterned with 0.35-0.5 μm diameter holes in a SiO 2 mask. The etch rate and anisotropy were determined using the F-to-ion flux ratio and F-to-O flux ratio.
UR - http://www.scopus.com/inward/record.url?scp=3142628358&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3142628358&partnerID=8YFLogxK
U2 - 10.1116/1.1710493
DO - 10.1116/1.1710493
M3 - Article
VL - 22
SP - 606
EP - 615
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 3
ER -