Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector

C. H. Lin, C. F. Lai, T. S. Ko, H. W. Huang, H. C. Kuo, Y. Y. Hung, Kok-Ming Leung, C. C. Yu, R. J. Tsai, C. K. Lee, T. C. Lu, S. C. Wang

    Research output: Contribution to journalArticle

    Abstract

    Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

    Original languageEnglish (US)
    Pages (from-to)2050-2052
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume18
    Issue number19
    DOIs
    StatePublished - Oct 1 2006

    Fingerprint

    Tin oxides
    indium oxides
    Indium
    tin oxides
    reflectors
    Light emitting diodes
    Multilayers
    light emitting diodes
    chips
    augmentation
    output
    Photonics
    Mirrors
    Energy gap
    photonics
    mirrors
    radiation
    TiO2-SiO2
    indium tin oxide

    Keywords

    • Flip-chip (FC)
    • Gan
    • Indium-tin-oxide (ITO)
    • Light-emitting diodes (LEDs)
    • Omnidirectional reflector (ODR)
    • One-dimensional photonic crystal (1-D PHC)

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector. / Lin, C. H.; Lai, C. F.; Ko, T. S.; Huang, H. W.; Kuo, H. C.; Hung, Y. Y.; Leung, Kok-Ming; Yu, C. C.; Tsai, R. J.; Lee, C. K.; Lu, T. C.; Wang, S. C.

    In: IEEE Photonics Technology Letters, Vol. 18, No. 19, 01.10.2006, p. 2050-2052.

    Research output: Contribution to journalArticle

    Lin, CH, Lai, CF, Ko, TS, Huang, HW, Kuo, HC, Hung, YY, Leung, K-M, Yu, CC, Tsai, RJ, Lee, CK, Lu, TC & Wang, SC 2006, 'Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector', IEEE Photonics Technology Letters, vol. 18, no. 19, pp. 2050-2052. https://doi.org/10.1109/LPT.2006.883330
    Lin, C. H. ; Lai, C. F. ; Ko, T. S. ; Huang, H. W. ; Kuo, H. C. ; Hung, Y. Y. ; Leung, Kok-Ming ; Yu, C. C. ; Tsai, R. J. ; Lee, C. K. ; Lu, T. C. ; Wang, S. C. / Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector. In: IEEE Photonics Technology Letters. 2006 ; Vol. 18, No. 19. pp. 2050-2052.
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    abstract = "Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31{\%} when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.",
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    AU - Yu, C. C.

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