Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

H. W. Huang, C. H. Lin, K. Y. Lee, C. C. Yu, J. K. Huang, B. D. Lee, H. C. Kuo, Kok-Ming Leung, S. C. Wang

    Research output: Contribution to journalArticle

    Abstract

    GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.

    Original languageEnglish (US)
    Article number085008
    JournalSemiconductor Science and Technology
    Volume24
    Issue number8
    DOIs
    StatePublished - 2009

    Fingerprint

    Photonic crystals
    Lithography
    Light emitting diodes
    light emitting diodes
    lithography
    photonics
    injection
    Crystal structure
    output
    crystal structure
    crystals
    Thin films
    thin films
    chips
    augmentation
    radiation

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Condensed Matter Physics

    Cite this

    Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography. / Huang, H. W.; Lin, C. H.; Lee, K. Y.; Yu, C. C.; Huang, J. K.; Lee, B. D.; Kuo, H. C.; Leung, Kok-Ming; Wang, S. C.

    In: Semiconductor Science and Technology, Vol. 24, No. 8, 085008, 2009.

    Research output: Contribution to journalArticle

    Huang, H. W. ; Lin, C. H. ; Lee, K. Y. ; Yu, C. C. ; Huang, J. K. ; Lee, B. D. ; Kuo, H. C. ; Leung, Kok-Ming ; Wang, S. C. / Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography. In: Semiconductor Science and Technology. 2009 ; Vol. 24, No. 8.
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    abstract = "GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78{\%} when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.",
    author = "Huang, {H. W.} and Lin, {C. H.} and Lee, {K. Y.} and Yu, {C. C.} and Huang, {J. K.} and Lee, {B. D.} and Kuo, {H. C.} and Kok-Ming Leung and Wang, {S. C.}",
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    TY - JOUR

    T1 - Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

    AU - Huang, H. W.

    AU - Lin, C. H.

    AU - Lee, K. Y.

    AU - Yu, C. C.

    AU - Huang, J. K.

    AU - Lee, B. D.

    AU - Kuo, H. C.

    AU - Leung, Kok-Ming

    AU - Wang, S. C.

    PY - 2009

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    AB - GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 νm × 350 νm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction.

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