Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography

H. W. Huang, C. H. Lin, C. C. Yu, B. D. Lee, C. H. Chiu, C. F. Lai, H. C. Kuo, Kok-Ming Leung, T. C. Lu, S. C. Wang

    Research output: Contribution to journalArticle

    Abstract

    Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

    Original languageEnglish (US)
    Article number185301
    JournalNanotechnology
    Volume19
    Issue number18
    DOIs
    StatePublished - May 7 2008

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    Nanoimprint lithography
    Nitrides
    Light emitting diodes
    Transistors

    ASJC Scopus subject areas

    • Materials Science(all)
    • Bioengineering
    • Chemistry(all)
    • Electrical and Electronic Engineering
    • Mechanical Engineering
    • Mechanics of Materials

    Cite this

    Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography. / Huang, H. W.; Lin, C. H.; Yu, C. C.; Lee, B. D.; Chiu, C. H.; Lai, C. F.; Kuo, H. C.; Leung, Kok-Ming; Lu, T. C.; Wang, S. C.

    In: Nanotechnology, Vol. 19, No. 18, 185301, 07.05.2008.

    Research output: Contribution to journalArticle

    Huang, HW, Lin, CH, Yu, CC, Lee, BD, Chiu, CH, Lai, CF, Kuo, HC, Leung, K-M, Lu, TC & Wang, SC 2008, 'Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography', Nanotechnology, vol. 19, no. 18, 185301. https://doi.org/10.1088/0957-4484/19/18/185301
    Huang, H. W. ; Lin, C. H. ; Yu, C. C. ; Lee, B. D. ; Chiu, C. H. ; Lai, C. F. ; Kuo, H. C. ; Leung, Kok-Ming ; Lu, T. C. ; Wang, S. C. / Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography. In: Nanotechnology. 2008 ; Vol. 19, No. 18.
    @article{a0f43c0b289d4622b0b3ce5438e218dc,
    title = "Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography",
    abstract = "Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48{\%} when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.",
    author = "Huang, {H. W.} and Lin, {C. H.} and Yu, {C. C.} and Lee, {B. D.} and Chiu, {C. H.} and Lai, {C. F.} and Kuo, {H. C.} and Kok-Ming Leung and Lu, {T. C.} and Wang, {S. C.}",
    year = "2008",
    month = "5",
    day = "7",
    doi = "10.1088/0957-4484/19/18/185301",
    language = "English (US)",
    volume = "19",
    journal = "Nanotechnology",
    issn = "0957-4484",
    publisher = "IOP Publishing Ltd.",
    number = "18",

    }

    TY - JOUR

    T1 - Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography

    AU - Huang, H. W.

    AU - Lin, C. H.

    AU - Yu, C. C.

    AU - Lee, B. D.

    AU - Chiu, C. H.

    AU - Lai, C. F.

    AU - Kuo, H. C.

    AU - Leung, Kok-Ming

    AU - Lu, T. C.

    AU - Wang, S. C.

    PY - 2008/5/7

    Y1 - 2008/5/7

    N2 - Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

    AB - Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

    UR - http://www.scopus.com/inward/record.url?scp=42549086318&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=42549086318&partnerID=8YFLogxK

    U2 - 10.1088/0957-4484/19/18/185301

    DO - 10.1088/0957-4484/19/18/185301

    M3 - Article

    C2 - 21825687

    AN - SCOPUS:42549086318

    VL - 19

    JO - Nanotechnology

    JF - Nanotechnology

    SN - 0957-4484

    IS - 18

    M1 - 185301

    ER -