Abstract
Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.
| Original language | English (US) |
|---|---|
| Article number | 185301 |
| Journal | Nanotechnology |
| Volume | 19 |
| Issue number | 18 |
| DOIs | |
| State | Published - May 7 2008 |
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ASJC Scopus subject areas
- Materials Science(all)
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
Cite this
Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography. / Huang, H. W.; Lin, C. H.; Yu, C. C.; Lee, B. D.; Chiu, C. H.; Lai, C. F.; Kuo, H. C.; Leung, Kok-Ming; Lu, T. C.; Wang, S. C.
In: Nanotechnology, Vol. 19, No. 18, 185301, 07.05.2008.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography
AU - Huang, H. W.
AU - Lin, C. H.
AU - Yu, C. C.
AU - Lee, B. D.
AU - Chiu, C. H.
AU - Lai, C. F.
AU - Kuo, H. C.
AU - Leung, Kok-Ming
AU - Lu, T. C.
AU - Wang, S. C.
PY - 2008/5/7
Y1 - 2008/5/7
N2 - Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.
AB - Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.
UR - http://www.scopus.com/inward/record.url?scp=42549086318&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42549086318&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/19/18/185301
DO - 10.1088/0957-4484/19/18/185301
M3 - Article
C2 - 21825687
AN - SCOPUS:42549086318
VL - 19
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 18
M1 - 185301
ER -