Enhanced channel mobility materials for MOSFETs on Si substrates

J. P. Donnelly, Davood Shahrjerdi, D. Q. Kelly, E. Tutuc, S. K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MOS high-k/metal devices with Ge and GaAs semiconductors were used to fabricate PMOS and NMOS devices, respectively. Selective, epitaxially grown (SEG) Ge PMOSFETs exhibit a 2× enhanced IDsat, and greater than 2× improvement in hole mobility compared to Si PMOSFETs. Buried-channel (BC) Ge1-xCx PMOSFETs showed a 2× enhancemsnt in IDsat over Si control PMOSFET and ∼1.5× improvement in effective mobility over universal curve for Si. The corresponding enhancement for surface channel (SC) Ge1-xCx PMOSFETs was 3times; and ∼2.5times;, respectively. The Ion/Ioff ratio for (BC) Ge1-xCx was greater than 5×104. GaAs NMOS capacitors using two different chemical surface treatments NH4OH and (NH4)2S prior to ALD-Al2O3 deposition were examined. Both treatments remove AS2O 3/AS2O6 upon Al2O3 deposition and unpinned the Al2O3/GaAs interface. However (NH4)2S has better frequency dispersion behavior and slightly smaller capacitance equivalent thickness (CET) than NH4OH treatment. Quasi-static CV measurement confirmed formation of a true inversion layer in GaAs.

Original languageEnglish (US)
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages47-60
Number of pages14
Volume11
Edition6
DOIs
StatePublished - 2007
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

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Inversion layers
Hole mobility
Substrates
Surface treatment
Capacitors
Capacitance
Semiconductor materials
Ions
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Donnelly, J. P., Shahrjerdi, D., Kelly, D. Q., Tutuc, E., & Banerjee, S. K. (2007). Enhanced channel mobility materials for MOSFETs on Si substrates. In ECS Transactions - 5th International Symposium on ULSI Process Integration (6 ed., Vol. 11, pp. 47-60) https://doi.org/10.1149/1.2780764

Enhanced channel mobility materials for MOSFETs on Si substrates. / Donnelly, J. P.; Shahrjerdi, Davood; Kelly, D. Q.; Tutuc, E.; Banerjee, S. K.

ECS Transactions - 5th International Symposium on ULSI Process Integration. Vol. 11 6. ed. 2007. p. 47-60.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Donnelly, JP, Shahrjerdi, D, Kelly, DQ, Tutuc, E & Banerjee, SK 2007, Enhanced channel mobility materials for MOSFETs on Si substrates. in ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 edn, vol. 11, pp. 47-60, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2780764
Donnelly JP, Shahrjerdi D, Kelly DQ, Tutuc E, Banerjee SK. Enhanced channel mobility materials for MOSFETs on Si substrates. In ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 ed. Vol. 11. 2007. p. 47-60 https://doi.org/10.1149/1.2780764
Donnelly, J. P. ; Shahrjerdi, Davood ; Kelly, D. Q. ; Tutuc, E. ; Banerjee, S. K. / Enhanced channel mobility materials for MOSFETs on Si substrates. ECS Transactions - 5th International Symposium on ULSI Process Integration. Vol. 11 6. ed. 2007. pp. 47-60
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