Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films

Abdullah Alharbi, Davood Shahrjerdi

Research output: Contribution to journalArticle

Abstract

Flexible electronics based on the otherwise rigid conventional crystalline semiconductors is emerging as a new class of technology. However, the existing layer-transfer approaches for implementing such technologies is mostly focused on maintaining the performance of the original device. Here we show that layer transfer through substrate cracking with a pre-tensioned nickel film readily enables the manipulation of the electronic band structure in flexible gallium arsenide (GaAs) devices. We empirically and theoretically quantify the effect of ‘engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence and quantum efficiency measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. The experimental results are in good agreement with our theoretical calculations. This study introduces a new way for strain engineering in flexible compound semiconductors with important implications for electronic and optoelectronic applications. (

Original languageEnglish (US)
Pages (from-to)627-633
Number of pages7
JournalPhysica Status Solidi - Rapid Research Letters
Volume10
Issue number8
DOIs
StatePublished - Aug 1 2016

Fingerprint

Gallium arsenide
Band structure
gallium
energy bands
engineering
Substrates
electronics
Semiconductor materials
Flexible electronics
Nickel
Quantum efficiency
Optoelectronic devices
Photoluminescence
Energy gap
Crystalline materials
quantum efficiency
manipulators
emerging
nickel
photoluminescence

Keywords

  • cracks
  • energy band engineering
  • flexible electronics
  • GaAs
  • strain engineering
  • substrates

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films. / Alharbi, Abdullah; Shahrjerdi, Davood.

In: Physica Status Solidi - Rapid Research Letters, Vol. 10, No. 8, 01.08.2016, p. 627-633.

Research output: Contribution to journalArticle

@article{9dd1ff8eaa224238aa3447131a651e74,
title = "Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films",
abstract = "Flexible electronics based on the otherwise rigid conventional crystalline semiconductors is emerging as a new class of technology. However, the existing layer-transfer approaches for implementing such technologies is mostly focused on maintaining the performance of the original device. Here we show that layer transfer through substrate cracking with a pre-tensioned nickel film readily enables the manipulation of the electronic band structure in flexible gallium arsenide (GaAs) devices. We empirically and theoretically quantify the effect of ‘engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence and quantum efficiency measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. The experimental results are in good agreement with our theoretical calculations. This study introduces a new way for strain engineering in flexible compound semiconductors with important implications for electronic and optoelectronic applications. (",
keywords = "cracks, energy band engineering, flexible electronics, GaAs, strain engineering, substrates",
author = "Abdullah Alharbi and Davood Shahrjerdi",
year = "2016",
month = "8",
day = "1",
doi = "10.1002/pssr.201600163",
language = "English (US)",
volume = "10",
pages = "627--633",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "8",

}

TY - JOUR

T1 - Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films

AU - Alharbi, Abdullah

AU - Shahrjerdi, Davood

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Flexible electronics based on the otherwise rigid conventional crystalline semiconductors is emerging as a new class of technology. However, the existing layer-transfer approaches for implementing such technologies is mostly focused on maintaining the performance of the original device. Here we show that layer transfer through substrate cracking with a pre-tensioned nickel film readily enables the manipulation of the electronic band structure in flexible gallium arsenide (GaAs) devices. We empirically and theoretically quantify the effect of ‘engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence and quantum efficiency measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. The experimental results are in good agreement with our theoretical calculations. This study introduces a new way for strain engineering in flexible compound semiconductors with important implications for electronic and optoelectronic applications. (

AB - Flexible electronics based on the otherwise rigid conventional crystalline semiconductors is emerging as a new class of technology. However, the existing layer-transfer approaches for implementing such technologies is mostly focused on maintaining the performance of the original device. Here we show that layer transfer through substrate cracking with a pre-tensioned nickel film readily enables the manipulation of the electronic band structure in flexible gallium arsenide (GaAs) devices. We empirically and theoretically quantify the effect of ‘engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence and quantum efficiency measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. The experimental results are in good agreement with our theoretical calculations. This study introduces a new way for strain engineering in flexible compound semiconductors with important implications for electronic and optoelectronic applications. (

KW - cracks

KW - energy band engineering

KW - flexible electronics

KW - GaAs

KW - strain engineering

KW - substrates

UR - http://www.scopus.com/inward/record.url?scp=84982266731&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84982266731&partnerID=8YFLogxK

U2 - 10.1002/pssr.201600163

DO - 10.1002/pssr.201600163

M3 - Article

AN - SCOPUS:84982266731

VL - 10

SP - 627

EP - 633

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 8

ER -