Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition

Abdullah Alharbi, Davood Shahrjerdi

Research output: Contribution to journalArticle

Abstract

We demonstrate chemical vapor deposition of large monolayer tungsten disulfide (WS2) (>200 μm). Photoluminescence and Raman spectroscopy provide insight into the structural and strain heterogeneity of the flakes. We observe exciton quenching at grain boundaries that originate from the nucleation site at the center of the WS2 flakes. Temperature variable transport measurements of top-gated WS2 transistors show an apparent metal-to-insulator transition. Variable range and thermally activated hopping mechanisms can explain the carrier transport in the insulating phase at low and intermediate temperatures. The devices exhibit room-temperature field-effect electron mobility as high as 48 cm2/V.s. The mobility increases with decreasing temperature and begins to saturate at below 100 °K, possibly due to Coulomb scattering or defects.

Original languageEnglish (US)
Article number193502
JournalApplied Physics Letters
Volume109
Issue number19
DOIs
StatePublished - Nov 7 2016

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disulfides
tungsten
flakes
vapor deposition
electronics
electron mobility
temperature
temperature distribution
transistors
grain boundaries
Raman spectroscopy
quenching
excitons
insulators
nucleation
photoluminescence
defects
room temperature
scattering
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition. / Alharbi, Abdullah; Shahrjerdi, Davood.

In: Applied Physics Letters, Vol. 109, No. 19, 193502, 07.11.2016.

Research output: Contribution to journalArticle

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