Electron-impact ionization of Si-organic compounds

R. Basner, M. Schmidt, Hans Deutsch, Kurt Becker

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

Original languageEnglish (US)
Title of host publicationFundamentals of plasma chemistry
EditorsM. Inokuti, K. Becker
Place of PublicationNew York
PublisherAcademic Press
Pages147-184
StatePublished - 2000

Cite this

Basner, R., Schmidt, M., Deutsch, H., & Becker, K. (2000). Electron-impact ionization of Si-organic compounds. In M. Inokuti, & K. Becker (Eds.), Fundamentals of plasma chemistry (pp. 147-184). New York: Academic Press.

Electron-impact ionization of Si-organic compounds. / Basner, R.; Schmidt, M.; Deutsch, Hans; Becker, Kurt.

Fundamentals of plasma chemistry. ed. / M. Inokuti; K. Becker. New York : Academic Press, 2000. p. 147-184.

Research output: Chapter in Book/Report/Conference proceedingChapter (peer-reviewed)

Basner, R, Schmidt, M, Deutsch, H & Becker, K 2000, Electron-impact ionization of Si-organic compounds. in M Inokuti & K Becker (eds), Fundamentals of plasma chemistry. Academic Press, New York, pp. 147-184.
Basner R, Schmidt M, Deutsch H, Becker K. Electron-impact ionization of Si-organic compounds. In Inokuti M, Becker K, editors, Fundamentals of plasma chemistry. New York: Academic Press. 2000. p. 147-184
Basner, R. ; Schmidt, M. ; Deutsch, Hans ; Becker, Kurt. / Electron-impact ionization of Si-organic compounds. Fundamentals of plasma chemistry. editor / M. Inokuti ; K. Becker. New York : Academic Press, 2000. pp. 147-184
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