Electrical resistivity of metallic thin films with rough surfaces

Kok-Ming Leung

    Research output: Contribution to journalArticle

    Abstract

    The electrical resistivity of metallic thin films due to the scattering of conduction electrons with rough surfaces and with a random distribution of static impurities within the film is calculated here quantum mechanically using Mori's formalism. The detailed profiles of the surfaces enter into our theory through the single-particle wave functions and energies, which are calculated with the help of a nonconformal coordinate transformation. A detailed analysis of the roughness contribution to the resistivity is made in the small-roughness regime and with the assumption of a Gaussian form for the surface profile autocorrelation functions. The structures of the Fermi levels are studied, and effects due to the discreteness of the levels are also investigated. Our surface-roughness resistivity does not saturate with decreasing film thickness, in agreement with experimental findings.

    Original languageEnglish (US)
    Pages (from-to)647-658
    Number of pages12
    JournalPhysical Review B
    Volume30
    Issue number2
    DOIs
    StatePublished - 1984

    Fingerprint

    Metallic films
    Surface roughness
    Thin films
    electrical resistivity
    roughness
    thin films
    coordinate transformations
    Wave functions
    profiles
    Fermi level
    statistical distributions
    Autocorrelation
    conduction electrons
    autocorrelation
    Film thickness
    surface roughness
    film thickness
    wave functions
    Scattering
    Impurities

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Electrical resistivity of metallic thin films with rough surfaces. / Leung, Kok-Ming.

    In: Physical Review B, Vol. 30, No. 2, 1984, p. 647-658.

    Research output: Contribution to journalArticle

    Leung, Kok-Ming. / Electrical resistivity of metallic thin films with rough surfaces. In: Physical Review B. 1984 ; Vol. 30, No. 2. pp. 647-658.
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