Effects of radiation damage on the charge density wave transitions in NbSe3

W. W. Fuller, P. M. Chaikin, N. P. Ong

    Research output: Contribution to journalArticle

    Abstract

    We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.

    Original languageEnglish (US)
    Pages (from-to)547-551
    Number of pages5
    JournalSolid State Communications
    Volume39
    Issue number4
    DOIs
    StatePublished - 1981

    Fingerprint

    Charge density waves
    Radiation damage
    radiation damage
    Defects
    defects
    electrical resistivity
    Protons
    Impurities
    Radiation
    impurities
    Temperature
    temperature
    protons
    augmentation
    radiation
    scattering

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Effects of radiation damage on the charge density wave transitions in NbSe3 . / Fuller, W. W.; Chaikin, P. M.; Ong, N. P.

    In: Solid State Communications, Vol. 39, No. 4, 1981, p. 547-551.

    Research output: Contribution to journalArticle

    Fuller, W. W. ; Chaikin, P. M. ; Ong, N. P. / Effects of radiation damage on the charge density wave transitions in NbSe3 . In: Solid State Communications. 1981 ; Vol. 39, No. 4. pp. 547-551.
    @article{ef0e5022e282408cac2def24c0f2d88c,
    title = "Effects of radiation damage on the charge density wave transitions in NbSe3",
    abstract = "We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5{\%}. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.",
    author = "Fuller, {W. W.} and Chaikin, {P. M.} and Ong, {N. P.}",
    year = "1981",
    doi = "10.1016/0038-1098(81)90320-3",
    language = "English (US)",
    volume = "39",
    pages = "547--551",
    journal = "Solid State Communications",
    issn = "0038-1098",
    publisher = "Elsevier Limited",
    number = "4",

    }

    TY - JOUR

    T1 - Effects of radiation damage on the charge density wave transitions in NbSe3

    AU - Fuller, W. W.

    AU - Chaikin, P. M.

    AU - Ong, N. P.

    PY - 1981

    Y1 - 1981

    N2 - We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.

    AB - We have measured the electrical resistivity of NbSe3 samples which have been radiation damaged with 2.5 MeV protons up to a defect concentration of 0.5%. We find that, unlike substitutional impurities, the defects do not destroy the charge density wave (CDW) transitions and the samples do not go superconducting. The defects become more effective scatterers below the CDW transitions so that the defect resistivity is temperature dependent. The defects pin the CDWs randomly so that carriers in the unnested regions can be scattered by the CDW. This leads to an enhancement of the defect resistivity. The resistivity of the highly damaged samples is still increasing with decreasing temperatures to below 1 K.

    UR - http://www.scopus.com/inward/record.url?scp=0019586376&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0019586376&partnerID=8YFLogxK

    U2 - 10.1016/0038-1098(81)90320-3

    DO - 10.1016/0038-1098(81)90320-3

    M3 - Article

    VL - 39

    SP - 547

    EP - 551

    JO - Solid State Communications

    JF - Solid State Communications

    SN - 0038-1098

    IS - 4

    ER -