Effect of H 2 dilution on the surface composition of plasma-deposited silicon films from SiH 4

Denise C. Marra, Erik A. Edelberg, Ryan L. Naone, Eray S. Aydil

Research output: Contribution to journalArticle

Abstract

The surface composition of silicon films deposited from SiH 4 , Ar, and H 2 plasmas was studied using in situ attenuated total reflection Fourier transform infrared spectroscopy with emphasis on the effects of H 2 dilution. In the absence of H 2 , the surface is primarily covered with SiH 3 and SiH 2 . With heavy H 2 dilution, the surface is predominantly monohydride terminated with infrared absorption frequencies consistent with the presence of SiH on Si (100) and Si (111) surfaces.

Original languageEnglish (US)
Pages (from-to)148-151
Number of pages4
JournalApplied Surface Science
Volume133
Issue number1-2
DOIs
StatePublished - May 1998

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Keywords

  • Amorphous silicon
  • Attenuated total reflection Fourier transform infrared spectroscopy
  • Nanocrystalline silicon
  • Plasma deposition

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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