We studied the electron impact ionization of silane (SiH4) which is widely used in the plasma deposition of different silicon-containing thin films. Absolute partial cross-sections for the formation of all fragment ions were measured in a high resolution double focusing sector field mass spectrometer with a modified ion extraction stage for electron energies from threshold to 100 eV. No evidence for the formation of stable parent SiH4 + ions was found in agreement with previous experimental investigations. The single positive fragment ion formation is the dominant ionization process. We observed the following product ions: SiH3 +, SiH2 +, SiH+, Si+, H2 +, and H+. The agreement between our measured absolute partial ionization cross-sections and two earlier data sets obtained by different techniques is generally good for the silicon-containing fragment ions taking into account quoted uncertainties of ± 10% to ± 20%, but less satisfactory for the formation of atomic and molecular hydrogen ions which were found to be produced with significant excess kinetic energies, particularly in the case of H+. A comparison of the total SiH4 ionization cross-section derived from the measured partial ionization cross-sections and a calculated cross-section based on the Binary-Encounter-Bethe (BEB) model showed excellent agreement in the energy range above 30 eV.
|Original language||English (US)|
|Number of pages||11|
|Journal||International Journal of Mass Spectrometry and Ion Processes|
|Publication status||Published - 1998|
- Electron impact ionization
- Plasma processing
ASJC Scopus subject areas