Dissociative ionization of silane by electron impact

R. Basner, M. Schmidt, V. Tarnovsky, K. Becker, H. Deutsch

Research output: Contribution to journalArticle

Abstract

We studied the electron impact ionization of silane (SiH4) which is widely used in the plasma deposition of different silicon-containing thin films. Absolute partial cross-sections for the formation of all fragment ions were measured in a high resolution double focusing sector field mass spectrometer with a modified ion extraction stage for electron energies from threshold to 100 eV. No evidence for the formation of stable parent SiH4 + ions was found in agreement with previous experimental investigations. The single positive fragment ion formation is the dominant ionization process. We observed the following product ions: SiH3 +, SiH2 +, SiH+, Si+, H2 +, and H+. The agreement between our measured absolute partial ionization cross-sections and two earlier data sets obtained by different techniques is generally good for the silicon-containing fragment ions taking into account quoted uncertainties of ± 10% to ± 20%, but less satisfactory for the formation of atomic and molecular hydrogen ions which were found to be produced with significant excess kinetic energies, particularly in the case of H+. A comparison of the total SiH4 ionization cross-section derived from the measured partial ionization cross-sections and a calculated cross-section based on the Binary-Encounter-Bethe (BEB) model showed excellent agreement in the energy range above 30 eV.

Original languageEnglish (US)
Pages (from-to)83-93
Number of pages11
JournalInternational Journal of Mass Spectrometry and Ion Processes
Volume171
Issue number1-3
StatePublished - 1998

Fingerprint

Silanes
silanes
electron impact
Ionization
Ions
ionization cross sections
ionization
Electrons
fragments
Silicon
ions
ion extraction
Plasma deposition
Impact ionization
cross sections
Mass spectrometers
silicon
hydrogen ions
molecular ions
Kinetic energy

Keywords

  • Cross-sections
  • Electron impact ionization
  • Plasma processing

ASJC Scopus subject areas

  • Spectroscopy

Cite this

Basner, R., Schmidt, M., Tarnovsky, V., Becker, K., & Deutsch, H. (1998). Dissociative ionization of silane by electron impact. International Journal of Mass Spectrometry and Ion Processes, 171(1-3), 83-93.

Dissociative ionization of silane by electron impact. / Basner, R.; Schmidt, M.; Tarnovsky, V.; Becker, K.; Deutsch, H.

In: International Journal of Mass Spectrometry and Ion Processes, Vol. 171, No. 1-3, 1998, p. 83-93.

Research output: Contribution to journalArticle

Basner, R, Schmidt, M, Tarnovsky, V, Becker, K & Deutsch, H 1998, 'Dissociative ionization of silane by electron impact', International Journal of Mass Spectrometry and Ion Processes, vol. 171, no. 1-3, pp. 83-93.
Basner, R. ; Schmidt, M. ; Tarnovsky, V. ; Becker, K. ; Deutsch, H. / Dissociative ionization of silane by electron impact. In: International Journal of Mass Spectrometry and Ion Processes. 1998 ; Vol. 171, No. 1-3. pp. 83-93.
@article{ed672419918445129ae52aaac9a5b916,
title = "Dissociative ionization of silane by electron impact",
abstract = "We studied the electron impact ionization of silane (SiH4) which is widely used in the plasma deposition of different silicon-containing thin films. Absolute partial cross-sections for the formation of all fragment ions were measured in a high resolution double focusing sector field mass spectrometer with a modified ion extraction stage for electron energies from threshold to 100 eV. No evidence for the formation of stable parent SiH4 + ions was found in agreement with previous experimental investigations. The single positive fragment ion formation is the dominant ionization process. We observed the following product ions: SiH3 +, SiH2 +, SiH+, Si+, H2 +, and H+. The agreement between our measured absolute partial ionization cross-sections and two earlier data sets obtained by different techniques is generally good for the silicon-containing fragment ions taking into account quoted uncertainties of ± 10{\%} to ± 20{\%}, but less satisfactory for the formation of atomic and molecular hydrogen ions which were found to be produced with significant excess kinetic energies, particularly in the case of H+. A comparison of the total SiH4 ionization cross-section derived from the measured partial ionization cross-sections and a calculated cross-section based on the Binary-Encounter-Bethe (BEB) model showed excellent agreement in the energy range above 30 eV.",
keywords = "Cross-sections, Electron impact ionization, Plasma processing",
author = "R. Basner and M. Schmidt and V. Tarnovsky and K. Becker and H. Deutsch",
year = "1998",
language = "English (US)",
volume = "171",
pages = "83--93",
journal = "International Journal of Mass Spectrometry",
issn = "1387-3806",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Dissociative ionization of silane by electron impact

AU - Basner, R.

AU - Schmidt, M.

AU - Tarnovsky, V.

AU - Becker, K.

AU - Deutsch, H.

PY - 1998

Y1 - 1998

N2 - We studied the electron impact ionization of silane (SiH4) which is widely used in the plasma deposition of different silicon-containing thin films. Absolute partial cross-sections for the formation of all fragment ions were measured in a high resolution double focusing sector field mass spectrometer with a modified ion extraction stage for electron energies from threshold to 100 eV. No evidence for the formation of stable parent SiH4 + ions was found in agreement with previous experimental investigations. The single positive fragment ion formation is the dominant ionization process. We observed the following product ions: SiH3 +, SiH2 +, SiH+, Si+, H2 +, and H+. The agreement between our measured absolute partial ionization cross-sections and two earlier data sets obtained by different techniques is generally good for the silicon-containing fragment ions taking into account quoted uncertainties of ± 10% to ± 20%, but less satisfactory for the formation of atomic and molecular hydrogen ions which were found to be produced with significant excess kinetic energies, particularly in the case of H+. A comparison of the total SiH4 ionization cross-section derived from the measured partial ionization cross-sections and a calculated cross-section based on the Binary-Encounter-Bethe (BEB) model showed excellent agreement in the energy range above 30 eV.

AB - We studied the electron impact ionization of silane (SiH4) which is widely used in the plasma deposition of different silicon-containing thin films. Absolute partial cross-sections for the formation of all fragment ions were measured in a high resolution double focusing sector field mass spectrometer with a modified ion extraction stage for electron energies from threshold to 100 eV. No evidence for the formation of stable parent SiH4 + ions was found in agreement with previous experimental investigations. The single positive fragment ion formation is the dominant ionization process. We observed the following product ions: SiH3 +, SiH2 +, SiH+, Si+, H2 +, and H+. The agreement between our measured absolute partial ionization cross-sections and two earlier data sets obtained by different techniques is generally good for the silicon-containing fragment ions taking into account quoted uncertainties of ± 10% to ± 20%, but less satisfactory for the formation of atomic and molecular hydrogen ions which were found to be produced with significant excess kinetic energies, particularly in the case of H+. A comparison of the total SiH4 ionization cross-section derived from the measured partial ionization cross-sections and a calculated cross-section based on the Binary-Encounter-Bethe (BEB) model showed excellent agreement in the energy range above 30 eV.

KW - Cross-sections

KW - Electron impact ionization

KW - Plasma processing

UR - http://www.scopus.com/inward/record.url?scp=30844437673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30844437673&partnerID=8YFLogxK

M3 - Article

VL - 171

SP - 83

EP - 93

JO - International Journal of Mass Spectrometry

JF - International Journal of Mass Spectrometry

SN - 1387-3806

IS - 1-3

ER -