Disorder enabled band structure engineering of a topological insulator surface

Yishuai Xu, Janet Chiu, Lin Miao, Haowei He, Zhanybek Alpichshev, A. Kapitulnik, Rudro R. Biswas, L. Andrew Wray

    Research output: Contribution to journalArticle

    Abstract

    Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

    Original languageEnglish (US)
    Article number14081
    JournalNature Communications
    Volume8
    DOIs
    StatePublished - Feb 3 2017

    Fingerprint

    Band structure
    insulators
    engineering
    disorders
    Electrons
    Scanning Tunnelling Microscopy
    Defects
    Electron gas
    defects
    Surface states
    Scanning tunneling microscopy
    electron gas
    proposals
    scanning tunneling microscopy
    electrons
    Gases
    Impurities
    Light
    conduction
    Equipment and Supplies

    ASJC Scopus subject areas

    • Chemistry(all)
    • Biochemistry, Genetics and Molecular Biology(all)
    • Physics and Astronomy(all)

    Cite this

    Xu, Y., Chiu, J., Miao, L., He, H., Alpichshev, Z., Kapitulnik, A., ... Wray, L. A. (2017). Disorder enabled band structure engineering of a topological insulator surface. Nature Communications, 8, [14081]. https://doi.org/10.1038/ncomms14081

    Disorder enabled band structure engineering of a topological insulator surface. / Xu, Yishuai; Chiu, Janet; Miao, Lin; He, Haowei; Alpichshev, Zhanybek; Kapitulnik, A.; Biswas, Rudro R.; Wray, L. Andrew.

    In: Nature Communications, Vol. 8, 14081, 03.02.2017.

    Research output: Contribution to journalArticle

    Xu, Y, Chiu, J, Miao, L, He, H, Alpichshev, Z, Kapitulnik, A, Biswas, RR & Wray, LA 2017, 'Disorder enabled band structure engineering of a topological insulator surface', Nature Communications, vol. 8, 14081. https://doi.org/10.1038/ncomms14081
    Xu, Yishuai ; Chiu, Janet ; Miao, Lin ; He, Haowei ; Alpichshev, Zhanybek ; Kapitulnik, A. ; Biswas, Rudro R. ; Wray, L. Andrew. / Disorder enabled band structure engineering of a topological insulator surface. In: Nature Communications. 2017 ; Vol. 8.
    @article{ac40e537e48b488992d975491f12d844,
    title = "Disorder enabled band structure engineering of a topological insulator surface",
    abstract = "Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.",
    author = "Yishuai Xu and Janet Chiu and Lin Miao and Haowei He and Zhanybek Alpichshev and A. Kapitulnik and Biswas, {Rudro R.} and Wray, {L. Andrew}",
    year = "2017",
    month = "2",
    day = "3",
    doi = "10.1038/ncomms14081",
    language = "English (US)",
    volume = "8",
    journal = "Nature Communications",
    issn = "2041-1723",
    publisher = "Nature Publishing Group",

    }

    TY - JOUR

    T1 - Disorder enabled band structure engineering of a topological insulator surface

    AU - Xu, Yishuai

    AU - Chiu, Janet

    AU - Miao, Lin

    AU - He, Haowei

    AU - Alpichshev, Zhanybek

    AU - Kapitulnik, A.

    AU - Biswas, Rudro R.

    AU - Wray, L. Andrew

    PY - 2017/2/3

    Y1 - 2017/2/3

    N2 - Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

    AB - Three-dimensional topological insulators are bulk insulators with Z 2 topological electronic order that gives rise to conducting light-like surface states. These surface electrons are exceptionally resistant to localization by non-magnetic disorder, and have been adopted as the basis for a wide range of proposals to achieve new quasiparticle species and device functionality. Recent studies have yielded a surprise by showing that in spite of resisting localization, topological insulator surface electrons can be reshaped by defects into distinctive resonance states. Here we use numerical simulations and scanning tunnelling microscopy data to show that these resonance states have significance well beyond the localized regime usually associated with impurity bands. At native densities in the model Bi2X3 (X=Bi, Te) compounds, defect resonance states are predicted to generate a new quantum basis for an emergent electron gas that supports diffusive electrical transport.

    UR - http://www.scopus.com/inward/record.url?scp=85011573661&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=85011573661&partnerID=8YFLogxK

    U2 - 10.1038/ncomms14081

    DO - 10.1038/ncomms14081

    M3 - Article

    AN - SCOPUS:85011573661

    VL - 8

    JO - Nature Communications

    JF - Nature Communications

    SN - 2041-1723

    M1 - 14081

    ER -