Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3

Y. S. Hor, P. Roushan, H. Beidenkopf, J. Seo, D. Qu, J. G. Checkelsky, L. A. Wray, D. Hsieh, Y. Xia, S. Y. Xu, D. Qian, M. Z. Hasan, N. P. Ong, A. Yazdani, R. J. Cava

    Research output: Contribution to journalArticle

    Abstract

    The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.

    Original languageEnglish (US)
    Article number195203
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume81
    Issue number19
    DOIs
    StatePublished - May 6 2010

    Fingerprint

    Ferromagnetism
    ferromagnetism
    insulators
    Surface states
    substitutes
    Thermoelectric power
    Hall effect
    Scanning tunneling microscopy
    Photoelectron spectroscopy
    Magnetic moments
    doped crystals
    scanning tunneling microscopy
    Magnetization
    Substitution reactions
    photoelectric emission
    magnetic moments
    Doping (additives)
    Single crystals
    magnetization
    Crystals

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Hor, Y. S., Roushan, P., Beidenkopf, H., Seo, J., Qu, D., Checkelsky, J. G., ... Cava, R. J. (2010). Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3 . Physical Review B - Condensed Matter and Materials Physics, 81(19), [195203]. https://doi.org/10.1103/PhysRevB.81.195203

    Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3 . / Hor, Y. S.; Roushan, P.; Beidenkopf, H.; Seo, J.; Qu, D.; Checkelsky, J. G.; Wray, L. A.; Hsieh, D.; Xia, Y.; Xu, S. Y.; Qian, D.; Hasan, M. Z.; Ong, N. P.; Yazdani, A.; Cava, R. J.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 19, 195203, 06.05.2010.

    Research output: Contribution to journalArticle

    Hor, YS, Roushan, P, Beidenkopf, H, Seo, J, Qu, D, Checkelsky, JG, Wray, LA, Hsieh, D, Xia, Y, Xu, SY, Qian, D, Hasan, MZ, Ong, NP, Yazdani, A & Cava, RJ 2010, 'Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3 ', Physical Review B - Condensed Matter and Materials Physics, vol. 81, no. 19, 195203. https://doi.org/10.1103/PhysRevB.81.195203
    Hor, Y. S. ; Roushan, P. ; Beidenkopf, H. ; Seo, J. ; Qu, D. ; Checkelsky, J. G. ; Wray, L. A. ; Hsieh, D. ; Xia, Y. ; Xu, S. Y. ; Qian, D. ; Hasan, M. Z. ; Ong, N. P. ; Yazdani, A. ; Cava, R. J. / Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3 . In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 19.
    @article{c196c69cb39243c59b6143a78592b703,
    title = "Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3",
    abstract = "The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.",
    author = "Hor, {Y. S.} and P. Roushan and H. Beidenkopf and J. Seo and D. Qu and Checkelsky, {J. G.} and Wray, {L. A.} and D. Hsieh and Y. Xia and Xu, {S. Y.} and D. Qian and Hasan, {M. Z.} and Ong, {N. P.} and A. Yazdani and Cava, {R. J.}",
    year = "2010",
    month = "5",
    day = "6",
    doi = "10.1103/PhysRevB.81.195203",
    language = "English (US)",
    volume = "81",
    journal = "Physical Review B-Condensed Matter",
    issn = "1098-0121",
    publisher = "American Physical Society",
    number = "19",

    }

    TY - JOUR

    T1 - Development of ferromagnetism in the doped topological insulator Bi 2-x MnxTe3

    AU - Hor, Y. S.

    AU - Roushan, P.

    AU - Beidenkopf, H.

    AU - Seo, J.

    AU - Qu, D.

    AU - Checkelsky, J. G.

    AU - Wray, L. A.

    AU - Hsieh, D.

    AU - Xia, Y.

    AU - Xu, S. Y.

    AU - Qian, D.

    AU - Hasan, M. Z.

    AU - Ong, N. P.

    AU - Yazdani, A.

    AU - Cava, R. J.

    PY - 2010/5/6

    Y1 - 2010/5/6

    N2 - The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.

    AB - The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites, forming compounds of the type Bi 2-xMnxTe3, and that the Mn substitutions are randomly distributed, not clustered. Mn doping first gives rise to local magnetic moments with Curie-like behavior, but by the compositions Bi 1.96 Mn0.04 Te3 and Bi1.91 Mn 0.09 Te3, a second-order ferromagnetic transition is observed, with TC ∼9-12 K. The easy axis of magnetization in the ferromagnetic phase is perpendicular to the Bi2 Te3 basal plane. Thermoelectric power and Hall effect measurements show that the Mn-doped Bi2Te3 crystals are p -type. Angle-resolved photoemission spectroscopy measurements show that the topological surface states that are present in pristine Bi2 Te3 are also present at 15 K in ferromagnetic Mn-doped Bi2-x MnxTe3 and that the dispersion relations of the surface states are changed in a subtle fashion.

    UR - http://www.scopus.com/inward/record.url?scp=77955643462&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77955643462&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevB.81.195203

    DO - 10.1103/PhysRevB.81.195203

    M3 - Article

    VL - 81

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 1098-0121

    IS - 19

    M1 - 195203

    ER -