Detection of combinative infrared absorption bands in thin silicon dioxide films

Sang M. Han, Eray Aydil

Research output: Contribution to journalArticle

Abstract

Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000cm-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.

Original languageEnglish (US)
Pages (from-to)3269-3271
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number24
DOIs
StatePublished - Jun 16 1997

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infrared absorption
silicon dioxide
absorption spectra
phonons
infrared spectroscopy
vapor deposition
shift
thin films
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Detection of combinative infrared absorption bands in thin silicon dioxide films. / Han, Sang M.; Aydil, Eray.

In: Applied Physics Letters, Vol. 70, No. 24, 16.06.1997, p. 3269-3271.

Research output: Contribution to journalArticle

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