Deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si

Saurabh J. Ullal, Harmeet Singh, Vahid Vahedi, Eray Aydil

Research output: Contribution to journalArticle

Abstract

The deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si was discussed. The Cl content and deposition rate of the films were quantified using the position of the Si-O peak and Si-O and OSi-Cl infrared absorption intensities. It was proposed that the silicon oxychloride film was deposited through oxidation of SiClx molecules adsorbed on the reactor walls.

Original languageEnglish (US)
Pages (from-to)499-506
Number of pages8
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number2
DOIs
StatePublished - Mar 1 2002

Fingerprint

Plasma etching
plasma etching
Silicon
silicon films
chambers
infrared absorption
reactors
Infrared absorption
Deposition rates
oxidation
molecules
Oxidation
Molecules

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si. / Ullal, Saurabh J.; Singh, Harmeet; Vahedi, Vahid; Aydil, Eray.

In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 20, No. 2, 01.03.2002, p. 499-506.

Research output: Contribution to journalArticle

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