Deposition of nanocrystalline silicon films at room temperature

Radhika C. Mani, Ioana Pavel, Eray Aydil

Research output: Contribution to journalArticle

Abstract

Bond rearrangements, facilitated by H insertion into strained Si-Si bonds have been shown to result in H-induced crystallization of amorphous silicon films. Whether such H-induced rearrangements can lead to synthesis of nanocrystalline films at room temperature has remained an open question. In this article, the authors demonstrate the deposition of thin films containing nanocrystals of silicon using inductively coupled SiH4 / H2 plasma at room temperature. Real time in situ spectroscopic ellipsometry and ex situ transmission electron microscopy revealed that the silicon nanocrystals nucleate below the surface, and grow beneath an amorphous silicon crust. This observation validates the hydrogen-induced crystallization model. Analysis of the crystal size distribution shows that the distribution depends on the growth duration rather than the substrate temperature. Observation of crystals as large as 100-150 nm at room temperature indicates that silicon nanocrystals not only nucleate but also grow substantially in the bulk even at room temperature.

Original languageEnglish (US)
Article number043305
JournalJournal of Applied Physics
Volume102
Issue number4
DOIs
StatePublished - Sep 7 2007

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silicon films
nanocrystals
room temperature
amorphous silicon
silicon
crystallization
ellipsometry
crystals
insertion
crusts
transmission electron microscopy
hydrogen
synthesis
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Deposition of nanocrystalline silicon films at room temperature. / Mani, Radhika C.; Pavel, Ioana; Aydil, Eray.

In: Journal of Applied Physics, Vol. 102, No. 4, 043305, 07.09.2007.

Research output: Contribution to journalArticle

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