Current-induced switching in single ferromagenetic layer nanopillar junctions

B. Özyilmaz, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    Current-induced magnetization dynamics in asymmetric CuCoCu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, five times greater than the anisotropic magnetoresistance effect. We present an experimentally obtained low field phase diagram of current-induced magnetization dynamics in single ferromagnetic layer pillar junctions.

    Original languageEnglish (US)
    Article number162506
    JournalApplied Physics Letters
    Volume88
    Issue number16
    DOIs
    StatePublished - Apr 17 2006

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    magnetization
    phase diagrams
    room temperature
    thin films
    magnetic fields

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Current-induced switching in single ferromagenetic layer nanopillar junctions. / Özyilmaz, B.; Kent, A. D.

    In: Applied Physics Letters, Vol. 88, No. 16, 162506, 17.04.2006.

    Research output: Contribution to journalArticle

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