Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation

Prajakta S. Chaudhari, Tejashree M. Bhave, Renu Pasricha, Fouran Singh, D. Kanjilal, S. V. Bhoraskar

Research output: Contribution to journalArticle

Abstract

We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.

Original languageEnglish (US)
Pages (from-to)185-190
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume239
Issue number3
DOIs
StatePublished - Sep 1 2005

Fingerprint

Nanocrystallites
Silicon oxides
Ion bombardment
ion irradiation
silicon oxides
fluence
Nanocrystals
nanocrystals
Silicon
silicon
matrices
Heavy ions
heavy ions
Nanoclusters
Ions
Crystallite size
nanoclusters
Photoluminescence
ions
Silver

Keywords

  • Oxide matrix
  • Silicon nanocrystallites
  • Swift heavy ion irradiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation. / Chaudhari, Prajakta S.; Bhave, Tejashree M.; Pasricha, Renu; Singh, Fouran; Kanjilal, D.; Bhoraskar, S. V.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 239, No. 3, 01.09.2005, p. 185-190.

Research output: Contribution to journalArticle

@article{153b962d653545c4b8184e03ca978d74,
title = "Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation",
abstract = "We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.",
keywords = "Oxide matrix, Silicon nanocrystallites, Swift heavy ion irradiation",
author = "Chaudhari, {Prajakta S.} and Bhave, {Tejashree M.} and Renu Pasricha and Fouran Singh and D. Kanjilal and Bhoraskar, {S. V.}",
year = "2005",
month = "9",
day = "1",
doi = "10.1016/j.nimb.2005.04.069",
language = "English (US)",
volume = "239",
pages = "185--190",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation

AU - Chaudhari, Prajakta S.

AU - Bhave, Tejashree M.

AU - Pasricha, Renu

AU - Singh, Fouran

AU - Kanjilal, D.

AU - Bhoraskar, S. V.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.

AB - We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.

KW - Oxide matrix

KW - Silicon nanocrystallites

KW - Swift heavy ion irradiation

UR - http://www.scopus.com/inward/record.url?scp=25144469384&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25144469384&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.04.069

DO - 10.1016/j.nimb.2005.04.069

M3 - Article

AN - SCOPUS:25144469384

VL - 239

SP - 185

EP - 190

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 3

ER -