Conductance of niobium oxide tunnel barriers

D. G. Walmsley, E. L. Wolf, J. W. Osmun

Research output: Contribution to journalArticle

Abstract

The conductance of plasma-grown oxide barriers on niobium films was measured in NbIPb tunnel junctions at 4.2 K and model parameters for the barriers were deduced. Prolonged oxidation leads to greater barrier heights. Oxygen vacancies in the barrier are invoked to explain barrier asymmetry.

Original languageEnglish (US)
Pages (from-to)61-66
Number of pages6
JournalThin Solid Films
Volume62
Issue number1
DOIs
StatePublished - Sep 3 1979

Fingerprint

Niobium
Niobium oxide
niobium oxides
Tunnel junctions
Oxygen vacancies
Oxides
tunnels
Tunnels
Plasmas
Oxidation
tunnel junctions
niobium
asymmetry
oxidation
oxides
oxygen

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Walmsley, D. G., Wolf, E. L., & Osmun, J. W. (1979). Conductance of niobium oxide tunnel barriers. Thin Solid Films, 62(1), 61-66. https://doi.org/10.1016/0040-6090(79)90382-1

Conductance of niobium oxide tunnel barriers. / Walmsley, D. G.; Wolf, E. L.; Osmun, J. W.

In: Thin Solid Films, Vol. 62, No. 1, 03.09.1979, p. 61-66.

Research output: Contribution to journalArticle

Walmsley, DG, Wolf, EL & Osmun, JW 1979, 'Conductance of niobium oxide tunnel barriers', Thin Solid Films, vol. 62, no. 1, pp. 61-66. https://doi.org/10.1016/0040-6090(79)90382-1
Walmsley, D. G. ; Wolf, E. L. ; Osmun, J. W. / Conductance of niobium oxide tunnel barriers. In: Thin Solid Films. 1979 ; Vol. 62, No. 1. pp. 61-66.
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