Compensation independence of anomalous metal-semiconductor tunneling near the Mott transition

E. L. Wolf, R. H. Wallis, C. J. Adkins

Research output: Contribution to journalArticle

Abstract

A temperature-dependent minimum in the conductance dIdV=G(V) is observed in tunneling into compensated Si:Sb near the metallic transition which, unexpectedly, does not shift from V=0 for substantial compensation K=NAND. A temperature dependence G(0)exp(- BT14) is observed below 4.2 K in nonmetallic samples, which indicates variable-range assisted tunneling into localized states. These results discriminate against a direct density-of-states interpretation of the conductance minimum. It is suggested that the effective electron-phonon coupling indicated by G(0)exp(- BT14) at V=0 enables an electron injected with energy eVkT, but still in the range of Anderson localization, to emit phonons and thus reach final states in the energy range 0<E<e V, relative to the Fermi energy. One may thus expect G(e V)0eVN(E) dE, consistent with G(0) a minimum, independent of K, as observed.

Original languageEnglish (US)
Pages (from-to)1603-1607
Number of pages5
JournalPhysical Review B
Volume12
Issue number4
DOIs
StatePublished - 1975

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Metals
Semiconductor materials
Electrons
Phonons
Fermi level
metals
Temperature
energy
phonons
electrons
temperature dependence
shift
Compensation and Redress
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Compensation independence of anomalous metal-semiconductor tunneling near the Mott transition. / Wolf, E. L.; Wallis, R. H.; Adkins, C. J.

In: Physical Review B, Vol. 12, No. 4, 1975, p. 1603-1607.

Research output: Contribution to journalArticle

Wolf, E. L. ; Wallis, R. H. ; Adkins, C. J. / Compensation independence of anomalous metal-semiconductor tunneling near the Mott transition. In: Physical Review B. 1975 ; Vol. 12, No. 4. pp. 1603-1607.
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