Compensation effect in an exchange enhanced superconductor

[(La.993Lu.007)1-xGdx]Ru2

T. E. Jones, E. P. Chock, P. M. Chaikin

    Research output: Contribution to journalArticle

    Abstract

    We have measured the upper critical field, Hc2, of alloys of the form [(La.993Lu.007)1-xGdx]Ru2. For large (x{greater-than or approximate}0.02) concentrations of Gd, the critical fields are re-entrant. For small (x{less-than or approximate}0.01) concentrations of Gd, the critical fields cross the pure sample critical fields and rise above them due to compensation of the externally applied magnetic field by the negative effective internal field of the magnetic impurity. Compensation occurs at relatively low fields (25 KG) in this system as a result of substantial exchange enhancement. From the concentration and critical field of the most compensated sample, we find a value for the exchange integral, J(0) = -(15+-2) meV, and a susceptibility enhancement factor in excellent agreement with EPR, specific heat and static susceptibility measurements.

    Original languageEnglish (US)
    Pages (from-to)635-638
    Number of pages4
    JournalSolid State Communications
    Volume20
    Issue number7
    DOIs
    StatePublished - 1976

    Fingerprint

    Superconducting materials
    Specific heat
    magnetic permeability
    Paramagnetic resonance
    augmentation
    Impurities
    Magnetic fields
    specific heat
    impurities
    magnetic fields
    Compensation and Redress

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Compensation effect in an exchange enhanced superconductor : [(La.993Lu.007)1-xGdx]Ru2. / Jones, T. E.; Chock, E. P.; Chaikin, P. M.

    In: Solid State Communications, Vol. 20, No. 7, 1976, p. 635-638.

    Research output: Contribution to journalArticle

    Jones, T. E. ; Chock, E. P. ; Chaikin, P. M. / Compensation effect in an exchange enhanced superconductor : [(La.993Lu.007)1-xGdx]Ru2. In: Solid State Communications. 1976 ; Vol. 20, No. 7. pp. 635-638.
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