Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations

Shaloo Rakheja, Vachan Kumar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With continued shrinking of device dimensions on chip, major advancements in intra chip interconnect technology are required to minimize delay, energy dissipation and cross-talk. In this paper, two alternative on-chip interconnect technology options are studied, namely the plasmonic and optical interconnects. It is shown that plasmonic interconnects can be 3 orders of magnitude faster than minimum sized CMOS interconnects at the 2016 technology node. However, their propagation length is limited to few microns and hence they can be used only as short local interconnects. Energy per bit of plasmonic interconnects is shot-noise limited and it increases exponentially with interconnect length. Cross-over length beyond which plasmonic interconnects become less energy efficient compared to CMOS interconnects is calculated. It is found to be 10 μm for Ag cylindrical plasmonic waveguides of 100-nm diameter embedded in SiO 2 dielectric at free-space wavelength of 1μm. Although plasmonic interconnects show potential as future local interconnects, plasmonic switches are needed for their implementation at the GSI(GigaScale Integration) level. Without plasmonic switches the energy and circuit overhead associated with signal conversion will be prohibitive. Optical interconnects, on the other hand, are limited to be used only at the global level due to the fundamental limitations on their size. Although the native interconnect delay of optical interconnects is quite less, their bandwidth density is limited due to the fundamental limitations on the minimum pitch. Wavelength division multiplexing is identified as one of the solutions towards increasing the bandwidth density of optical interconnects. Critical length beyond which optical interconnects offer higher bandwidth compared to copper interconnects is identified to be equal to the chip edge in absence of WDM. In presence of 4 channel WDM, the critical length improves to 0.4cm. Critical length assessment based on energy comparison with CMOS interconnect is evaluated to be 0.15cm.

Original languageEnglish (US)
Title of host publicationProceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012
Pages732-739
Number of pages8
DOIs
StatePublished - 2012
Event13th International Symposium on Quality Electronic Design, ISQED 2012 - Santa Clara, CA, United States
Duration: Mar 19 2012Mar 21 2012

Other

Other13th International Symposium on Quality Electronic Design, ISQED 2012
CountryUnited States
CitySanta Clara, CA
Period3/19/123/21/12

Fingerprint

Optical interconnects
Wavelength division multiplexing
Bandwidth
Switches
Circular waveguides
Shot noise
Energy dissipation
Copper
Wavelength
Networks (circuits)

Keywords

  • Interconnects
  • Optics
  • Plasmons
  • Wavelength Division Multiplexing

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Rakheja, S., & Kumar, V. (2012). Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations. In Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012 (pp. 732-739). [6187573] https://doi.org/10.1109/ISQED.2012.6187573

Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations. / Rakheja, Shaloo; Kumar, Vachan.

Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012. 2012. p. 732-739 6187573.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rakheja, S & Kumar, V 2012, Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations. in Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012., 6187573, pp. 732-739, 13th International Symposium on Quality Electronic Design, ISQED 2012, Santa Clara, CA, United States, 3/19/12. https://doi.org/10.1109/ISQED.2012.6187573
Rakheja S, Kumar V. Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations. In Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012. 2012. p. 732-739. 6187573 https://doi.org/10.1109/ISQED.2012.6187573
Rakheja, Shaloo ; Kumar, Vachan. / Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations. Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012. 2012. pp. 732-739
@inproceedings{74205a557bf741eb8ce92a8ff6963ec3,
title = "Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations",
abstract = "With continued shrinking of device dimensions on chip, major advancements in intra chip interconnect technology are required to minimize delay, energy dissipation and cross-talk. In this paper, two alternative on-chip interconnect technology options are studied, namely the plasmonic and optical interconnects. It is shown that plasmonic interconnects can be 3 orders of magnitude faster than minimum sized CMOS interconnects at the 2016 technology node. However, their propagation length is limited to few microns and hence they can be used only as short local interconnects. Energy per bit of plasmonic interconnects is shot-noise limited and it increases exponentially with interconnect length. Cross-over length beyond which plasmonic interconnects become less energy efficient compared to CMOS interconnects is calculated. It is found to be 10 μm for Ag cylindrical plasmonic waveguides of 100-nm diameter embedded in SiO 2 dielectric at free-space wavelength of 1μm. Although plasmonic interconnects show potential as future local interconnects, plasmonic switches are needed for their implementation at the GSI(GigaScale Integration) level. Without plasmonic switches the energy and circuit overhead associated with signal conversion will be prohibitive. Optical interconnects, on the other hand, are limited to be used only at the global level due to the fundamental limitations on their size. Although the native interconnect delay of optical interconnects is quite less, their bandwidth density is limited due to the fundamental limitations on the minimum pitch. Wavelength division multiplexing is identified as one of the solutions towards increasing the bandwidth density of optical interconnects. Critical length beyond which optical interconnects offer higher bandwidth compared to copper interconnects is identified to be equal to the chip edge in absence of WDM. In presence of 4 channel WDM, the critical length improves to 0.4cm. Critical length assessment based on energy comparison with CMOS interconnect is evaluated to be 0.15cm.",
keywords = "Interconnects, Optics, Plasmons, Wavelength Division Multiplexing",
author = "Shaloo Rakheja and Vachan Kumar",
year = "2012",
doi = "10.1109/ISQED.2012.6187573",
language = "English (US)",
isbn = "9781467310369",
pages = "732--739",
booktitle = "Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012",

}

TY - GEN

T1 - Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations

AU - Rakheja, Shaloo

AU - Kumar, Vachan

PY - 2012

Y1 - 2012

N2 - With continued shrinking of device dimensions on chip, major advancements in intra chip interconnect technology are required to minimize delay, energy dissipation and cross-talk. In this paper, two alternative on-chip interconnect technology options are studied, namely the plasmonic and optical interconnects. It is shown that plasmonic interconnects can be 3 orders of magnitude faster than minimum sized CMOS interconnects at the 2016 technology node. However, their propagation length is limited to few microns and hence they can be used only as short local interconnects. Energy per bit of plasmonic interconnects is shot-noise limited and it increases exponentially with interconnect length. Cross-over length beyond which plasmonic interconnects become less energy efficient compared to CMOS interconnects is calculated. It is found to be 10 μm for Ag cylindrical plasmonic waveguides of 100-nm diameter embedded in SiO 2 dielectric at free-space wavelength of 1μm. Although plasmonic interconnects show potential as future local interconnects, plasmonic switches are needed for their implementation at the GSI(GigaScale Integration) level. Without plasmonic switches the energy and circuit overhead associated with signal conversion will be prohibitive. Optical interconnects, on the other hand, are limited to be used only at the global level due to the fundamental limitations on their size. Although the native interconnect delay of optical interconnects is quite less, their bandwidth density is limited due to the fundamental limitations on the minimum pitch. Wavelength division multiplexing is identified as one of the solutions towards increasing the bandwidth density of optical interconnects. Critical length beyond which optical interconnects offer higher bandwidth compared to copper interconnects is identified to be equal to the chip edge in absence of WDM. In presence of 4 channel WDM, the critical length improves to 0.4cm. Critical length assessment based on energy comparison with CMOS interconnect is evaluated to be 0.15cm.

AB - With continued shrinking of device dimensions on chip, major advancements in intra chip interconnect technology are required to minimize delay, energy dissipation and cross-talk. In this paper, two alternative on-chip interconnect technology options are studied, namely the plasmonic and optical interconnects. It is shown that plasmonic interconnects can be 3 orders of magnitude faster than minimum sized CMOS interconnects at the 2016 technology node. However, their propagation length is limited to few microns and hence they can be used only as short local interconnects. Energy per bit of plasmonic interconnects is shot-noise limited and it increases exponentially with interconnect length. Cross-over length beyond which plasmonic interconnects become less energy efficient compared to CMOS interconnects is calculated. It is found to be 10 μm for Ag cylindrical plasmonic waveguides of 100-nm diameter embedded in SiO 2 dielectric at free-space wavelength of 1μm. Although plasmonic interconnects show potential as future local interconnects, plasmonic switches are needed for their implementation at the GSI(GigaScale Integration) level. Without plasmonic switches the energy and circuit overhead associated with signal conversion will be prohibitive. Optical interconnects, on the other hand, are limited to be used only at the global level due to the fundamental limitations on their size. Although the native interconnect delay of optical interconnects is quite less, their bandwidth density is limited due to the fundamental limitations on the minimum pitch. Wavelength division multiplexing is identified as one of the solutions towards increasing the bandwidth density of optical interconnects. Critical length beyond which optical interconnects offer higher bandwidth compared to copper interconnects is identified to be equal to the chip edge in absence of WDM. In presence of 4 channel WDM, the critical length improves to 0.4cm. Critical length assessment based on energy comparison with CMOS interconnect is evaluated to be 0.15cm.

KW - Interconnects

KW - Optics

KW - Plasmons

KW - Wavelength Division Multiplexing

UR - http://www.scopus.com/inward/record.url?scp=84863692163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863692163&partnerID=8YFLogxK

U2 - 10.1109/ISQED.2012.6187573

DO - 10.1109/ISQED.2012.6187573

M3 - Conference contribution

AN - SCOPUS:84863692163

SN - 9781467310369

SP - 732

EP - 739

BT - Proceedings of the 13th International Symposium on Quality Electronic Design, ISQED 2012

ER -