Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices

Shaloo Rakheja, A. Naeemi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, compact semi-empirical models of spin-transport parameters in Si and GaAs as a function of doping concentration, temperature, and size effects are developed. It is found that the room-temperature spin-relaxation length, Ls, in n-type Si degrades from 5 μm at low doping levels to <1 μm for a doping level of 1019 cm3. On the other hand, Ls is 0.5 μm in GaAs at R.T., and it is independent of doping concentration but it degrades as 1/T, where T is the lattice temperature. Using the models of spin-transport parameters, the spin injection and transport efficiency (SITE) in non-local spin-torque (NLST) devices is quantified. It is found that there is an optimal doping concentration in Si that maximizes SITE. In the case of GaAs, SITE improves with increasing doping concentration due to the reduction in the resistivity with doping. The compact spin-transport models developed in this work can be used to estimate the performance and the energy dissipation of the NLST logic.

Original languageEnglish (US)
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: Aug 20 2012Aug 23 2012

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period8/20/128/23/12

Fingerprint

torque
Torque
Doping (additives)
injection
Temperature
Energy dissipation
logic
temperature effects
energy dissipation
electrical resistivity
gallium arsenide
room temperature
estimates

Keywords

  • Doping optimization
  • Semiconducting interconnects
  • Spin injection and transport efficiency
  • Spin logic
  • Spin torque

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Rakheja, S., & Naeemi, A. (2012). Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 [6321912] https://doi.org/10.1109/NANO.2012.6321912

Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices. / Rakheja, Shaloo; Naeemi, A.

2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 2012. 6321912.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rakheja, S & Naeemi, A 2012, Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices. in 2012 12th IEEE International Conference on Nanotechnology, NANO 2012., 6321912, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, Birmingham, United Kingdom, 8/20/12. https://doi.org/10.1109/NANO.2012.6321912
Rakheja, Shaloo ; Naeemi, A. / Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices. 2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 2012.
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