Chlorine containing hydrogenated amorphous silicon without optical band gap widening

Akihiro Takano, Takehito Wada, Shinji Fujikake, Takashi Yoshida, Tokio Ohto, Eray Aydil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chlorine containing hydrogenated amorphous silicon films were deposited by adding HCl to SiH4 containing plasmas. Bulk and surface bonding features, film thickness and optical band gap were examined by in situ infrared spectroscopies and spectroscopic ellipsometry. The introduction of HCl does not affect the deposition rate significantly. In situ infrared spectra show that the HCl introduction eliminates unfavorable higher hydride bonding structures (SiH2 and/or SiH in voids) in the deposited bulk films, and increases the film density. The films deposited from mixtures of SiH4 and HCl do not show significant optical band gap widening in spite of containing over 1021cm-3 Cl atoms, a concentration that is comparable to that of hydrogen. In situ infrared spectra show that the growing top surface is changed drastically from higher silicon hydride to chlorinated lower hydride.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1619-1622
Number of pages4
VolumeB
StatePublished - Dec 1 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period5/11/035/18/03

Fingerprint

Optical band gaps
Amorphous silicon
Chlorine
Hydrides
Infrared radiation
Spectroscopic ellipsometry
Deposition rates
Silanes
Film thickness
Infrared spectroscopy
Plasmas
Atoms
Hydrogen

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Takano, A., Wada, T., Fujikake, S., Yoshida, T., Ohto, T., & Aydil, E. (2003). Chlorine containing hydrogenated amorphous silicon without optical band gap widening. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (Vol. B, pp. 1619-1622)

Chlorine containing hydrogenated amorphous silicon without optical band gap widening. / Takano, Akihiro; Wada, Takehito; Fujikake, Shinji; Yoshida, Takashi; Ohto, Tokio; Aydil, Eray.

Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. Vol. B 2003. p. 1619-1622.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takano, A, Wada, T, Fujikake, S, Yoshida, T, Ohto, T & Aydil, E 2003, Chlorine containing hydrogenated amorphous silicon without optical band gap widening. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. vol. B, pp. 1619-1622, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 5/11/03.
Takano A, Wada T, Fujikake S, Yoshida T, Ohto T, Aydil E. Chlorine containing hydrogenated amorphous silicon without optical band gap widening. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Vol. B. 2003. p. 1619-1622
Takano, Akihiro ; Wada, Takehito ; Fujikake, Shinji ; Yoshida, Takashi ; Ohto, Tokio ; Aydil, Eray. / Chlorine containing hydrogenated amorphous silicon without optical band gap widening. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. Vol. B 2003. pp. 1619-1622
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