Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

Davood Shahrjerdi, D. I. Garcia-Gutierrez, E. Tutuc, S. K. Banerjee

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Abstract

In this work, we study the chemical and physical properties of the interface between Al2O3 and GaAs for different surface treatments of GaAs. The interfacial layer between the high- κ layer and GaAs substrate was studied using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The reduction in native oxide layer was observed upon atomic layer deposition of Al2O3 on nontreated GaAs using trimethyl aluminum precursor. It was also observed that the sulfide treatment effectively mitigates the formation of the interfacial layer as compared to the surface hydroxylation using N H4 OH. The electrical characteristics of GaAs capacitors further substantiate the XPS and TEM results.

Original languageEnglish (US)
Article number223501
JournalApplied Physics Letters
Volume92
Issue number22
DOIs
Publication statusPublished - 2008

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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